d. Maximum under Steady State conditions is 40 °C/W.
Junction-to-Ambient
b, d
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
8
0.33
Maximum
11
0.4
Unit
°C/W
Document Number: 73474
S09-0659-Rev. E, 20-Apr-09
www.vishay.com
1
SUM90P10-19L
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 100 V, V
GS
= 0 V
V
DS
= - 100 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
10 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 20 A
V
GS
= - 4.5 V, I
D
= - 15 A
V
DS
= - 15 V, I
D
= - 20 A
Min.
- 100
Typ.
Max.
Unit
V
- 125
5.9
-1
-3
± 100
-1
- 500
- 90
0.0156
0.0173
80
11100
V
DS
= - 50 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 50 V, V
GS
= - 10 V, I
D
= - 90 A
V
DS
= - 50 V, V
GS
= - 4.5 V, I
D
= - 90 A
f = 1 MHz
V
DD
= - 50 V, R
L
= 0.56
Ω
I
D
≅
- 90 A, V
GEN
= - 10 V, R
g
= 1
Ω
700
1690
217
97
42
51
3.5
20
510
145
870
30
855
220
1300
ns
Ω
326
146
nC
pF
0.019
0.021
mV/°C
V
nA
µA
A
Ω
S
Drain-Source Body Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 20 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 20 A
- 0.8
80
220
56
24
ns
T
C
= 25 °C
- 90
- 250
- 1.5
120
330
V
ns
nC
A
Notes
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73474
S09-0659-Rev. E, 20-Apr-09
SUM90P10-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
180
40
150
I
D
- Drain-Current (A)
V
GS
= 10
V
thru 4
V
I
D
- Drain Current (A)
30
120
90
20
25 °C
10
60
30
3
V
T
C
= 125 °C
0
0.0
- 55 °C
0
0
1
2
3
4
1.0
2.0
3.0
4.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.030
V
GS
= 4.5
V
R
DS(on)
- On-Resistance (Ω)
12 000
0.020
C - Capacitance (pF)
15 000
Transfer Characteristics
C
iss
9000
V
GS
= 10
V
0.010
6000
C
rss
3000
C
oss
0.000
0
20
40
60
80
100
120
0
0
20
40
60
80
100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source (V)
On-Resistance vs. Drain Current
10.0
I
D
= - 90 A
V
GS
- Gate-to-Source
Voltage
(V)
8.0
R
DS(on)
- On-Resistance
(Normalized)
2.1
V
DS
= 50
V
2.5
V
GS
= 10
V
I
D
= 20 A
Capacitance
6.0
1.7
V
DS
=
80 V
4.0
1.3
2.0
0.9
0.0
0.0
40.0
80.0
120.0
160.0
200.0
240.0
0.5
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73474
S09-0659-Rev. E, 20-Apr-09
On-Resistance vs. Junction Temperature
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3
SUM90P10-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.10
0.08
I
S
- Source Current (A)
T
J
= 150 °C
10
25 °C
0.06
0.04
125 °C
0.02
25 °C
0.00
1
2
3
4
5
6
7
8
9
10
1
0.0
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.9
6000
On-Resistance vs. Gate-to-Source Voltage
0.7
I
D
= 10 mA
V
GS(th)
V
ariance (
V
)
0.5
Po
w
er (W)
5000
4000
0.3
3000
0.1
2000
- 0.1
1000
- 0.3
- 50
- 25
0
25
50
75
100
125
150
175
0
0.0001
0.001
0.01
Time (s)
0.10
1
T
J
- Temperature (°C)
Threshold Voltage
400
350
300
Po
w
er Dissipation (W)
250
200
150
100
50
0
25
50
75
100
125
150
175
T
C
- Case-Temperature (°C)
I
D
- Drain Current (A)
100
1000
Single Pulse, Junction-to-Case (T
C
= 25 °C)
Limited
by
R
DS(on)
*
10
µs
100
µs
10
1 ms
10 ms
DC
1
Single pulse
T
c
= 25 °C
0.1
0.1
100
1
10
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Power Derating (Junction-to-Case)
Safe Operating Area
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Document Number: 73474
S09-0659-Rev. E, 20-Apr-09
SUM90P10-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
120
1000
90
I
D
- Drain Current (A)
I
D
a
v
- Peak Avalanche Curent (A)
100
60
10
30
1
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
0.1
0.00001
0.0001
0.001
0.01
0.1
1.0
t
in
- Time in Avalanche (s)
Max Avalanche and Drain Current vs. Case Temperature
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
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