BS616LV4020DI datasheet, PDF - EEWORLD Datasheet

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BS616LV4020DI: DescriptionVery Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable; File Size217KB，12 Pages; ManufacturerBSI; Websitehttp://www.brilliancesemi.com/

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BS616LV4020DI Overview

Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

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BSI

FEATURES

Very Low Power/Voltage CMOS SRAM

256K x 16 or 512K x 8 bit switchable

DESCRIPTION

BS616LV4020

• Very low operation voltage : 2.7 ~ 3.6V

• Very low power consumption :

Vcc = 3.0V C-grade: 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.5uA (Typ.) CMOS standby current

• High speed access time :

-70

70ns (Max.) at Vcc=3.0V

-10

100ns (Max.) at Vcc=3.0V

•Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

The BS616LV4020 is a high performance, very low power CMOS Static

Random Access Memory organized as 262,144 words by 16 bits or

524,288 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 2.7V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.5uA and maximum access time of 70/100ns in 3V operation.

Easy memory expansion is provided by active HIGH chip

enable2(CE2), active LOW chip enable1(CE1), active LOW output

enable(OE) and three-state output drivers.

The BS616LV4020 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV4020 is available in DICE form and 48-pin BGA type.

PRODUCT FAMILY

OPERATING

TEMPERATURE

SPEED

(ns)

Vcc=3.0V

POWER DISSIPATION

STANDBY

Operating

CCSB1

, Max)

PRODUCT FAMILY

Vcc RANGE

PKG TYPE

Vcc=3.0V

BS616LV4020DC

BS616LV4020AC

BS616LV4020BC

BS616LV4020DI

BS616LV4020AI

BS616LV4020BI

+0 C to +70 C

2.7V ~ 3.6V

70 / 100

8uA

20mA

-40 C to +85 C

2.7V ~ 3.6V

70 / 100

12uA

25mA

DICE

BGA-48-0608

BGA-48-0810

DICE

BGA-48-0608

BGA-48-0810

PIN CONFIGURATION

BLOCK DIAGRAM

A15

A14

A13

A12

A11

A10

A17

Address

Input

Buffer

Row

Decoder

2048

Memory Array

2048 x 2048

2048

16(8)

Data

Input

Buffer

16(8)

Column I/O

D15

CE1

CE2

CIO

Vdd

Vss

Write Driver

16(8)

Sense Amp

128(256)

Column Decoder

16(8)

Data

Output

Buffer

14(16)

Control

Address Input Buffer

A16 A0 A1 A2 A3 A4 A5

(SAE)

Brilliance Semiconductor Inc

reserves the right to modify document contents without notice.

R0201-BS616LV4020

Revision 2.3

April 2002

BS616LV4020DI Related Products

	BS616LV4020DI	BS616LV4020	BS616LV4020AI	BS616LV4020DC	BS616LV4020AC	BS616LV4020BC	BS616LV4020BI
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

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