SMCG5629 thru SMCG5665A
and SMCJ5629 thru SMCJ5665A
Transient Voltage Suppressors
SCOTTSDALE DIVISION
DESCRIPTION
These surface mount Transient Voltage Suppressors (TVSs) are used for protecting
sensitive components requiring low clamping voltage levels. They are rated at high
current impulses typically generated by inductive switching transients. Other
benefits are achieved with low-profile surface mount J-bend or Gull-wing terminals
for stress-relief and lower weight. Its low-flat profile provides easier insertion or
automatic handling benefits compared to other MELF style packages. Options for
screening similar to JAN, JANTX, JANTXV, and JANS also exist by using MQ, MX,
MV or MSP respectively for part number prefixes and high reliability screening in
accordance with MIL-PRF-19500/507.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
•
•
•
•
Working Standoff Voltages: 5.5 volts to 171 volts
Metallurgically bonded
Reliability data per JESD22-A108, JESD22-A104,
JESD22-A113-B, JESD22-A101-B, and JESD22-A102
Thermally efficient surface mount with J-bends or
Gull wings termination for stress relief (flat handling
surface and easier placement)
Options for screening in accordance with MIL-PRF-
19500/500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example,
designate a MXSMCJ5629A for a JANTX screen.
APPLICATIONS / BENEFITS
•
For high reliability transient voltage suppression in
low profile surface mount locations requiring easy
placement and strain relief
•
Light weight for airborne or satellite applications
•
Superior surge quality to protect from ESD and EFT
transients per IEC61000-4-2 and -4-4
•
Lightning surge protection per IEC61000-4-5 for
Class 1 and 2 with source impedance of 42 Ohms as
well as Class 3 and 4 selectively at lower voltages
(V
WM
) and higher surge current (I
PP
) ratings herein
•
•
Protects sensitive components such as ICs, CMOS,
Bipolar, BiCMOS, ECL, DTL, T
2
L, etc.
MAXIMUM RATINGS
•
•
•
•
•
•
•
•
Operating temperature: -55°C to +150°C
Storage temperature: -55°C to +150°C
1500 Watts of Peak Pulse Power at 10/1000 µs as
shown in Figure 3 (see Figure 1 for other t
P
values)
Thermal resistance, R
θJL
= 20°C/W
Impulse repetition rate (duty factor): 0.01%
5.0 Watt steady-state maximum power at T
L
=25°C
t
clamping
(0V to V
(BR)
min): 50 picoseconds max
(theoretical)
Forward voltage V
F
@ 100 Amps 8.3 ms: 3.5 V max
.
MECHANICAL AND PACKAGING
•
Molded epoxy package meets UL94V-0
•
Terminals: Solderable per MIL-STD-750
Method 2026. (max 260 °C for 10 sec.)
•
Body marked with P/N without SMCJ or SMCG letters
(ie. 5629A, 5640, 5655A, 5662, 5665A, etc.)
•
Cathode indicated by band
•
Weight: 0.25 grams (approximate)
•
Tape & Reel packaging per EIA-481
(2500 units/reel)
ELECTRICAL CHARACTERISTICS @ 25
o
C (Test Both Polarities)
MICROSEMI
Part Number
Modified
“G”
Bend Lead
SMCG5629
SMCG5629A
SMCG5630
SMCG5630A
SMCG5631
SMCG5631A
SMCG5632
SMCG5632A
SMCG5633
SMCG5633A
SMCG5634
SMCG5634A
MICROSEMI
Part Number
Modified
“J”
Bend Lead
SMCJ5629
SMCJ5629A
SMCJ5630
SMCJ5630A
SMCJ5631
SMCJ5631A
SMCJ5632
SMCJ5632A
SMCJ5633
SMCJ5633A
SMCJ5634
SMCJ5634A
Breakdown
Voltage*
(V
BR
)
MIN. MAX.
Vdc
Vdc
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.5
9.9
10.5
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
Test
Current
(I
(BR)
)
mAdc
10
10
10
10
10
10
1
1
1
1
1
1
Rated
Standoff
Voltage
(V
WM
)
V
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
Maximum
Standby
Current
(I
D
at V
WM
)
µAdc
1000
1000
500
500
200
200
50
50
10
10
5
5
SMCG/J5629 thru
SMCG/J5665A
Maximum Peak
Reverse Voltage
(V
C
max. at I
PP
)
V
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
Maximum Peak
Pulse Current
(I
PP
)
A
139
143
128
132
120
124
109
112
100
103
93
96
Copyright
2003
01-24-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
SMCG5629 thru SMCG5665A
and SMCJ5629 thru SMCJ5665A
Transient Voltage Suppressors
SCOTTSDALE DIVISION
OUTLINE AND CIRCUIT
WWW .
Microsemi
.C
OM
Peak Pulse Power (P
PP
) in KW
Exponential wave-
form (See FIG. 2)
Square-wave pulse
C: Capacitance in pico farads
Measured at
zero voltage
Measured at
Stand-off Voltage
Pulse Time (tp)
FIGURE 1
Non-repetitive peak pulse power rating curve.
Note: Peak power defined as peak voltage times peak current.
BV: Breakdown Voltage in Volts
FIGURE 5
TYPICAL CAPACITANCE vs. BREAKDOWN VOLTAGE
Peak pulse power (P
PP
) or current I
PP
(surge) in percent of 25
o
C rating
Pulse current (IP) in percent of I
PP
Peak Value
I
PP
Pulse time duration (tp) is
defined as that point where
I
P
decays to 50% of I
(surge).
Steady-state power
dissipation (watts)
T
L
– Lead Temperature C
o
FIGURE 4
Time (t) in milliseconds
FIGURE 2
Pulse wave form for exponential surge
Steady-state power
derating curve
T
A
Ambient Temperature C
o
FIGURE 3
Derating curve
PACKAGE DIMENSIONS
SMCG/J5629 thru
SMCG/J5665A
MIN
MAX
MIN
MAX
A
.115
.121
2.92
3.07
DIMENSIONS IN INCHES
B
C
D
E
F
.260
.220
.305
.075
.380
.280
.245
.320
.095
.400
DIMENSIONS IN MILLIMETERS
6.60
5.59
7.75
1.90
9.65
7.11
6.22
8.13
2.41 10.16
K
.025
.040
0.635
1.016
L
.30
.060
0.760
1.520
DO-214AB
Copyright
2003
01-24-2003 REV A
DO-215AB
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Renesas Electronics MCUs
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