EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1436133097 |
| package instruction | DIP, DIP28,.6 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 350 ns |
| command user interface | NO |
| Data polling | YES |
| JESD-30 code | R-XDIP-T28 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of terminals | 28 |
| word count | 8192 words |
| character code | 8000 |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 8KX8 |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| ready/busy | YES |
| Maximum standby current | 0.003 A |
| Maximum slew rate | 0.045 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| switch bit | NO |
| Maximum write cycle time (tWC) | 1 ms |
| AT28C64-35DI | AT28C64X-30DI | AT28C64E-35DI | AT28C64E-45DC | AT28C64F-35DI | AT28C64F-45DC | |
|---|---|---|---|---|---|---|
| Description | EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28 | EEPROM, 8KX8, 300ns, Parallel, CMOS, CDIP28 | EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28 | EEPROM, 8KX8, 450ns, Parallel, CMOS, CDIP28 | EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28 | EEPROM, 8KX8, 450ns, Parallel, CMOS, CDIP28 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Objectid | 1436133097 | 1164789232 | 1529355746 | 1155498973 | 1155498986 | 1155498992 |
| package instruction | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum access time | 350 ns | 300 ns | 350 ns | 450 ns | 350 ns | 450 ns |
| command user interface | NO | NO | NO | NO | NO | NO |
| Data polling | YES | YES | YES | YES | YES | YES |
| JESD-30 code | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| Memory IC Type | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 |
| Number of terminals | 28 | 28 | 28 | 28 | 28 | 28 |
| word count | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
| character code | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
| Maximum operating temperature | 85 °C | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C |
| Minimum operating temperature | -40 °C | -40 °C | -40 °C | - | -40 °C | - |
| organize | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
| Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum standby current | 0.003 A | 0.003 A | 0.003 A | 0.002 A | 0.003 A | 0.002 A |
| Maximum slew rate | 0.045 mA | 0.045 mA | 0.045 mA | 0.03 mA | 0.045 mA | 0.03 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| switch bit | NO | NO | NO | NO | NO | NO |
| ready/busy | YES | - | YES | YES | YES | YES |
| Maximum write cycle time (tWC) | 1 ms | - | 0.2 ms | 0.2 ms | 0.2 ms | 0.2 ms |
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