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AT28C64E-35DI

Description
EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28
Categorystorage    storage   
File Size599KB,11 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric Compare View All

AT28C64E-35DI Overview

EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28

AT28C64E-35DI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1529355746
package instructionDIP, DIP28,.6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time350 ns
command user interfaceNO
Data pollingYES
JESD-30 codeR-XDIP-T28
JESD-609 codee0
memory density65536 bit
Memory IC TypeEEPROM
memory width8
Number of terminals28
word count8192 words
character code8000
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8KX8
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
ready/busyYES
Maximum standby current0.003 A
Maximum slew rate0.045 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
switch bitNO
Maximum write cycle time (tWC)0.2 ms

AT28C64E-35DI Related Products

AT28C64E-35DI AT28C64X-30DI AT28C64-35DI AT28C64E-45DC AT28C64F-35DI AT28C64F-45DC
Description EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28 EEPROM, 8KX8, 300ns, Parallel, CMOS, CDIP28 EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28 EEPROM, 8KX8, 450ns, Parallel, CMOS, CDIP28 EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28 EEPROM, 8KX8, 450ns, Parallel, CMOS, CDIP28
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Objectid 1529355746 1164789232 1436133097 1155498973 1155498986 1155498992
package instruction DIP, DIP28,.6 DIP, DIP28,.6 DIP, DIP28,.6 DIP, DIP28,.6 DIP, DIP28,.6 DIP, DIP28,.6
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 350 ns 300 ns 350 ns 450 ns 350 ns 450 ns
command user interface NO NO NO NO NO NO
Data polling YES YES YES YES YES YES
JESD-30 code R-XDIP-T28 R-XDIP-T28 R-XDIP-T28 R-XDIP-T28 R-XDIP-T28 R-XDIP-T28
JESD-609 code e0 e0 e0 e0 e0 e0
memory density 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit
Memory IC Type EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
memory width 8 8 8 8 8 8
Number of terminals 28 28 28 28 28 28
word count 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words
character code 8000 8000 8000 8000 8000 8000
Maximum operating temperature 85 °C 85 °C 85 °C 70 °C 85 °C 70 °C
Minimum operating temperature -40 °C -40 °C -40 °C - -40 °C -
organize 8KX8 8KX8 8KX8 8KX8 8KX8 8KX8
Package body material CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC
encapsulated code DIP DIP DIP DIP DIP DIP
Encapsulate equivalent code DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.003 A 0.003 A 0.003 A 0.002 A 0.003 A 0.002 A
Maximum slew rate 0.045 mA 0.045 mA 0.045 mA 0.03 mA 0.045 mA 0.03 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
switch bit NO NO NO NO NO NO
ready/busy YES - YES YES YES YES
Maximum write cycle time (tWC) 0.2 ms - 1 ms 0.2 ms 0.2 ms 0.2 ms
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