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5962H9751702QXC

Description
MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28
Categorystorage    storage   
File Size130KB,23 Pages
ManufacturerHoneywell
Websitehttp://www.ssec.honeywell.com/
Download Datasheet Parametric Compare View All

5962H9751702QXC Overview

MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28

5962H9751702QXC Parametric

Parameter NameAttribute value
Objectid2078465043
Parts packaging codeDIP
package instructionDIP, DIP28,.6
Contacts28
Reach Compliance Codeunknown
ECCN code3A001.A.1.A
Maximum access time40 ns
JESD-30 codeR-CDIP-T28
JESD-609 codee4
memory density262144 bit
Memory IC TypeMASK ROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class Q
Maximum standby current0.00002 A
Maximum slew rate0.0065 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
total dose1M Rad(Si) V
REVISIONS
LTR
DESCRIPTION
DATE
(YR-MO-DA)
APPROVED
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
15
16
17
18
REV
SHEET
PREPARED BY
Gary L. Gross
19
20
21
22
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 42316-5000
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
Jeff Bowling
APPROVED BY
Raymond Monnin
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-
HARDENED, 32K x 8-BIT MASK PROGRAMMABLE ROM,
MONOLITHIC SILICON
DRAWING APPROVAL DATE
97-05-30
SIZE
REVISION LEVEL
CAGE CODE
A
SHEET
1
67268
OF
22
5962-97517
AMSC N/A
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E167-97

5962H9751702QXC Related Products

5962H9751702QXC 5962H9751701QXC 5962H9751701VXC 5962H9751702VXC
Description MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28 MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28 MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28 MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28
Objectid 2078465043 2078465007 2078465025 2078465061
Parts packaging code DIP DIP DIP DIP
package instruction DIP, DIP28,.6 DIP, DIP28,.6 DIP, DIP28,.6 DIP, DIP28,.6
Contacts 28 28 28 28
Reach Compliance Code unknown unknown unknown unknown
ECCN code 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A
Maximum access time 40 ns 40 ns 40 ns 40 ns
JESD-30 code R-CDIP-T28 R-CDIP-T28 R-CDIP-T28 R-CDIP-T28
JESD-609 code e4 e4 e4 e4
memory density 262144 bit 262144 bit 262144 bit 262144 bit
Memory IC Type MASK ROM MASK ROM MASK ROM MASK ROM
memory width 8 8 8 8
Number of functions 1 1 1 1
Number of terminals 28 28 28 28
word count 32768 words 32768 words 32768 words 32768 words
character code 32000 32000 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
organize 32KX8 32KX8 32KX8 32KX8
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code DIP DIP DIP DIP
Encapsulate equivalent code DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Filter level MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class V MIL-PRF-38535 Class V
Maximum standby current 0.00002 A 0.00002 A 0.00002 A 0.00002 A
Maximum slew rate 0.0065 mA 0.0065 mA 0.0065 mA 0.0065 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY
Terminal surface GOLD GOLD GOLD GOLD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL
total dose 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V

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