5962H9751701QXC datasheet, PDF

Datasheet> All Categories > storage> storage> 5962H9751701QXC

5962H9751701QXC: DescriptionMASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28; Categorystorage storage; File Size130KB，23 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

Download Datasheet Parametric Compare View All

5962H9751701QXC Overview

MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28

5962H9751701QXC Parametric

Parameter Name	Attribute value
Objectid	2078465007
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	unknown
ECCN code	3A001.A.1.A
Maximum access time	40 ns
JESD-30 code	R-CDIP-T28
JESD-609 code	e4
memory density	262144 bit
Memory IC Type	MASK ROM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class Q
Maximum standby current	0.00002 A
Maximum slew rate	0.0065 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
total dose	1M Rad(Si) V

Preview

Download Datasheet

View All

REVISIONS

LTR

DESCRIPTION

DATE

(YR-MO-DA)

APPROVED

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

REV

SHEET

PREPARED BY

Gary L. Gross

PMIC N/A

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 42316-5000

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

CHECKED BY

Jeff Bowling

APPROVED BY

Raymond Monnin

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-

HARDENED, 32K x 8-BIT MASK PROGRAMMABLE ROM,

MONOLITHIC SILICON

DRAWING APPROVAL DATE

97-05-30

SIZE

REVISION LEVEL

CAGE CODE

SHEET

67268

5962-97517

AMSC N/A

DSCC FORM 2233

APR 97

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

5962-E167-97

HANDBOOKS

MILITARY

MIL-HDBK-103

MIL-HDBK-780

- List of Standard Microcircuit Drawings (SMD's).

- Standard Microcircuit Drawings.

(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless

otherwise specified, the issues of the documents which are DoD adopted are those listed in the issue of the DODISS cited in the

solicitation. Unless otherwise specified, the issues of documents not listed in the DODISS are the issues of the documents cited in

the solicitation.

AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)

ASTM Standard F1192-88

Standard Guide for the Measurement of Single Event Phenomena from

Heavy Ion Irradiation of Semiconductor Devices.

(Applications for copies of ASTM publications should be addressed to the American Society for Testing and Materials, 1916 Race

Street, Philadelphia, PA 19103.)

ELECTRONICS INDUSTRIES ASSOCIATION (EIA)

JEDEC Standard No. 17

A Standardized Test Procedure for the Characterization of

Latch-up in CMOS Integrated Circuits.

(Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Blvd., Arlington, VA 22201.)

(Non-Government standards and other publications are normally available from the organizations that prepare or distribute the

documents. These documents also may be available in or through libraries or other informational services.)

2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of

this drawing shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535

and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM

plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in

accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in

MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.

3.2.3 Truth table. The truth table for unprogrammed devices shall be as specified on figure 3.

3.2.4 AC test circuit and timing characteristics. The ac test circuit and timing characteristics shall be as specified on figure 4.

3.2.5 Read cycle waveforms. The read cycle waveforms shall be as specified on figure 5.

3.3.6 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 6.

3.2.7 Pin function descripton. See 6.5.

SIZE

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 42316-5000

DESC FORM 193A

JUL 94

REVISION LEVEL

5962-97517

SHEET

3.2.8 Data retention. A data retention stress test shall be completed as part of the vendor's reliability monitors. This test shall be

done for initial characterization and after any design or process changes which may affect data retention. The methods and

procedures may be vendor specific but shall guarantee data retention as specified in paragraph 1.3 over the full military temperature

range. The vendor's procedure shall be kept under document control and shall be made available upon request of the aquiring or

preparing activity, along with test data.

3.3 AID requirements. All AID's written against this SMD shall be sent to DSCC-VAS. The following items shall be provided to

the device manufacturer by the customer as part of an AID. These items form a part of the manufacturer's design

database/database archive and shall be maintained under document revision level control of the device manufacturer's Technology

Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon

request. As such, these items will not appear in the AID in the traditional sense.

3.3.1 ROM mask definition. To generate a mask for a ROM code, an ASCII file shall be submitted. The format for the code shall

be as follows:

a. Two fields, address followed by data in hexadecimal code, most significant bit to least significant bit (AH is most significant

bit).

b. Addresses need not be in order.

c. Address and data fields must be separated by at least one space or a slash "/".

d. A semicolon ";" may terminate the line, but is not required.

e. No "end-of-file" characters are required.

f. Comments are preceded by the pound sign "#".

g. Comments may be on the same line

AFTER

address and data fields.

h. Unused locations do not need to be addressed, but

MUST

be specified as all zeroes or all ones. This can be done as a

comment.

3.3.2 Fault coverage measurement of manufacturing logic tests.

3.3.3 Burn-in circuit.

3.3.4 Radiation exposure circuit.

3.3.5 Maximum device cross section for SEP.

3.3.6 Programmed devices. The truth table for final masked (programmed) devices shall as specified in the altered item drawing.

3.4 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified, the electrical

performance characteristics, and postirradiation parameter limits are as specified in table I and shall apply over the full case

operating temperature range.

3.5 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests

for each subgroup are defined in table I.

3.6 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked

as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the

manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator

shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M

shall be in accordance with MIL-PRF-38535, appendix A.

3.6.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

SIZE

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 42316-5000

DESC FORM 193A

JUL 94

REVISION LEVEL

5962-97517

SHEET

5962H9751701QXC Related Products

	5962H9751701QXC	5962H9751702QXC	5962H9751701VXC	5962H9751702VXC
Description	MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28	MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28	MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28	MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28
Objectid	2078465007	2078465043	2078465025	2078465061
Parts packaging code	DIP	DIP	DIP	DIP
package instruction	DIP, DIP28,.6	DIP, DIP28,.6	DIP, DIP28,.6	DIP, DIP28,.6
Contacts	28	28	28	28
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	3A001.A.1.A	3A001.A.1.A	3A001.A.1.A	3A001.A.1.A
Maximum access time	40 ns	40 ns	40 ns	40 ns
JESD-30 code	R-CDIP-T28	R-CDIP-T28	R-CDIP-T28	R-CDIP-T28
JESD-609 code	e4	e4	e4	e4
memory density	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	MASK ROM	MASK ROM	MASK ROM	MASK ROM
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of terminals	28	28	28	28
word count	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
organize	32KX8	32KX8	32KX8	32KX8
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP28,.6	DIP28,.6	DIP28,.6	DIP28,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V
Maximum standby current	0.00002 A	0.00002 A	0.00002 A	0.00002 A
Maximum slew rate	0.0065 mA	0.0065 mA	0.0065 mA	0.0065 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	GOLD	GOLD	GOLD	GOLD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
total dose	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V

Recommended Resources

Voltage dividing self-bias circuit

330W AC voltage regulator circuit

Forty variable oscillators with single control.gif

Emergency wiring of AC contactor lacking auxiliary contacts

Clock pulse edge shaping circuit

l 500v isolation circuit for D/A slave converter

Experimental study on a new broadband magic T-type: This paper uses the characteristics of a four-port network and a new structure to realize the function of a standard waveguide magic T. Not only is the size of the structure greatly reduced, but the d...; JasonYoo Power technology

Ask about upgrading WinCE 5.0 to WinCE 6 Rx: I am currently using WinCE 5.0, and I plan to migrate to WinCE 6.0 Rx. What are the benefits of upgrading WinCE5.0 to WinCE 6 Rx? I have checked some articles online, and they all seem to be talking a...; qiujinjin Embedded System

Ask a question about parameter passing (msp430f5438A): The function is to delete a segment in the flash, but the starting address cannot be passed in. Could you please help me find out where the problem lies? The code is as follows: #include "msp430.h" #i...; zeng.43 Microcontroller MCU

Ask about the use of msp430f425: 1. Can the I+ and I- of sd16 be used to collect voltage signals? If so, how should they be set?2. Can sd16 collect differential signals? If so, can it identify negative voltages? (i.e. collect the dif...; dongdongbo119 Microcontroller MCU

Implementing web server on window mobile 5.0: The question is as the title says! Hope you can give me some advice!...; kedou000007 Embedded System

Pocket PC emulator connection issues: I have some knowledge of using Pocket PC 2003 simulator with VS.NET 2005. Now I want to use VS.NET 2003 to develop PDA project, using Pocket PC 2002 simulator. There is a device simulator manager in ....; lololo Embedded System

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components