Mini PROFET® BSP 452
MiniPROFET
•
High-side switch
•
Short-circuit protection
•
Input protection
•
Overtemperature protection with hysteresis
•
Overload protection
•
Overvoltage protection
•
Switching inductive load
•
Clamp of negative output voltage with inductive loads
•
Undervoltage shutdown
•
Maximum current internally limited
•
Electrostatic discharge
(ESD) protection
•
Reverse battery protection
1)
Package: SOT 223
Type
Ordering code
Q67000-S271
4
3
2
1
BSP 452
Application
• µC
compatible power switch for 12 V DC grounded loads
•
All types of resistive, inductive and capacitive loads
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically
integrated in Smart SIPMOS
®
technology. Fully protected by embedded protection functions.
Blockdiagramm:
+ Vbb
4
Voltage
source
ESD-
Diode
Overvoltage
protection
Current
limit
Gate
protection
V
Logic
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
OUT
Temperature
sensor
1
3
R
IN
in
Load
ESD
Logic
GND
MINI-PROFET
Load GND
2
Signal GND
1) With resistor R
GND=150
Ω
in GND connection, resistor in series with IN connections reverse load current
limited by connected load.
Semiconductor Group
1
08.96
Mini PROFET® BSP 452
Pin
1
2
3
4
Symbol
OUT
GND
IN
Vbb
O
-
I
+
Function
Output to the load
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage
Load current
self-limited
Maximum input voltage
2)
Maximum input current
Inductive load switch-off energy dissipation,
single pulse
I
L
= 0.5A ,
T
A
= 150°C
(not tested, specified by design)
Load dump protection
3
)
V
LoadDump
=U
A
+V
s
R
L
= 24Ω
R
I
=2Ω ,
t
d
=400ms, IN= low or high,
U
A
=12V
R
L
= 80Ω
(not tested, specified by design)
Electrostatic discharge capability (ESD)
5)
PIN 3
PIN 1,2,4
Operating temperature range
Storage temperature range
Max. power dissipation (DC)
6)
Thermal resistance
Symbol
V
bb
I
L
V
IN
I
IN
E
AS
Values
40
Unit
V
A
V
mA
J
I
L(SC)
-5.0...V
bb
±5
0.5
V
Load dump4
)
47
67
±1
±2
-40 ...+150
-55 ...+150
1.8
7
70
V
V
ESD
T
j
T
stg
P
tot
R
thJS
R
thJA
kV
°C
W
K/W
T
A
= 25 °C
chip - soldering point:
chip - ambient:
6)
2) At V > V , the input current is not allowed to exceed
±5
mA.
IN
bb
3) Supply voltages higher than V
bb(AZ) require an external current limit for the GND pin, e.g. with a 150
Ω
resistor in the GND connection
A resistor for the protection of the input is integrated.
4) V
Load dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) HBM according to MIL-STD 883D, Methode 3015.7
6) BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for V connection
bb
Semiconductor Group
2
Mini PROFET® BSP 452
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25 °C,
Vbb
= 13.5V unless otherwise specified
Symbol
Values
min
typ
Unit
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
I
L
= 0.5 A,
V
in
= high
T
j
= 25°C
T
j
= 150°C
Nominal load current (pin 4 to 1)
7)
ISO Standard:
V
ON
=
V
bb
-
V
OUT
= 0.5 V
T
S
= 85 °C
Turn-on time
to 90%
V
OUT
Turn-off time
to 10%
V
OUT
R
L
= 24
Ω
Slew rate on
10 to 30%
V
OUT
,
R
L
= 24
Ω
Slew rate off
70 to 40%
V
OUT
,
R
L
= 24
Ω
R
ON
I
L(ISO)
--
--
1.7
0.16
--
--
0.2
0.4
--
Ω
A
t
on
t
off
dV /dt
on
-dV/dt
off
--
--
--
--
60
60
2
2
100
150
4
4
µs
V/µs
V/µs
Input
Allowable input voltage range, (pin 3 to 2)
Input turn-on threshold voltage
T
j
= -40...+150°C
Input turn-off threshold voltage
T
j
= -40...+150°C
Input threshold hysteresis
Off state input current (pin 3)
V
IN(off)
= 1.2 V
T
j
= -40...+150°C
On state input current (pin 3)
V
IN(on)
= 3.0 V to
V
bb
T
j
= -40...+150°C
Input resistance
V
IN
V
IN(T+)
V
IN(T-)
∆V
IN(T)
I
IN(off)
I
IN(on)
R
IN
-3.0
--
1.5
--
10
10
1.5
--
--
--
0.5
--
--
2.8
V
bb
3.5
--
--
60
100
3.5
V
V
V
V
µA
µA
kΩ
7)
I
L(ISO) characterizes the MOSFET part of the device and may be higher than the shortcircuit current
IL(SC)
of the whole device
Semiconductor Group
3
Mini PROFET® BSP 452
Parameter and Conditions
at
T
j
= 25 °C,
Vbb
= 13.5V unless otherwise specified
Symbol
Values
min
typ
Unit
max
Operating Parameters
Operating voltage
8
)
Undervoltage shutdown
Undervoltage restart
T
j
=-40...+150°C
T
j
=-40...+150°C
T
j
=-40...+25°C
T
j
=+150°C
Undervoltage restart of charge pumpe
see diagram page 7
Undervoltage hysteresis
∆
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
T
j
=-40...+150°C
Overvoltage shutdown
T
j
=-40...+150°C
Overvoltage restart
T
j
=-40...+150°C
Overvoltage hysteresis
Standby current (pin 4),
V
in
= low
T
j
=-40...+150°C
Operating current (pin 2),
V
in
= 5 V
T
j
=-40...+25°C
leakage current (pin 1)
V
in
= low
T
j
=150°C
Protection Functions
T
j
= 25°C
Current limit (pin 4 to 1)
V
bb
= 20V
T
j
= -40...+150°C
Overvoltage protection
Ibb=4mA T
j
=-40...+150°C
Output clamp (ind. load switch off)
at
V
OUT
=V
bb
-V
ON(CL),
I
bb
= 4mA
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation
9
)
T
j Start
= 150 °C, single pulse,
I
L
= 0.5 A,
V
bb
= 12 V
(not tested, specified by design)
Reverse battery (pin 4 to 2)
10
)
(not tested, specified by design)
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
∆
V
bb(under)
5.0
3.5
--
--
--
34
33
--
--
--
--
--
--
--
5.6
0.3
--
--
0.7
10
1
2
34
5
6.5
7.0
7
--
42
--
--
25
1.6
5
7
V
V
V
V
V
V
V
V
µA
mA
µA
V
bb(over)
V
bb(o rst)
∆
V
bb(over)
I
bb(off)
I
GND
I
L(off)
I
L(SC)
V
bb(AZ)
V
ON(CL)
T
jt
∆T
jt
E
AS
0.7
0.7
41
41
150
--
--
1.5
--
--
47
--
10
--
2
2.4
--
--
--
--
0.5
A
V
V
°C
K
J
-V
bb
--
--
30
V
8) At supply voltage increase up to
V
= 5.6 V typ without charge pump,
V
bb
OUT
≈
Vbb
- 2 V
9) While demagnetizing load inductance, dissipated energy in PROFET is
E
=
V
AS
∫
ON(CL) *
iL(t)
dt, approx.
VON(CL)
2
EAS=
1/2 *
L
*
I
* (
)
L
VON(CL)
-
Vbb
10) Requires 150
Ω
resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the
connected load.
Semiconductor Group
4
Mini PROFET® BSP 452
Max. allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
18
16
14
12
T
SP
10
1
Current limit characteristic
IL(SC) = f (Von);
(Von see testcircuit)
IL(SC) [A]
2
1.8
1.6
1.4
1.2
150°C
25°C
-40°C
8
0.8
6
0.6
4
T
A
2
0
0
25
50
75
100
125
150
0.4
0.2
0
0
2
4
6
8
10
12
14
TA, TSP[°C]
Von [V]
On state resistance (Vbb-pin to OUT-pin)
RON = f (Tj);
Vbb = 13.5 V; IL = 0.5 A
RON [Ω]
0.4
0.35
0.3
Typ. input current
IIN = f (VIN);
Vbb = 13,5 V
IIN [µA]
50
-40°C
45
40
35
+ 25°C
0.25
0.2
0.15
0.1
98%
30
25
20
15
10
+ 150°C
0.05
0
-50
-25
0
25
50
75
100 125 150
5
0
0
2
4
6
8
10
12
14
Tj [°C]
VIN [V]
Semiconductor Group
5
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