MT5LSDT872AG-10E datasheet, PDF

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MT5LSDT872AG-10E: DescriptionSynchronous DRAM Module, 8MX72, 6ns, CMOS, PDMA168,; Categorystorage storage; File Size348KB，22 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT5LSDT872AG-10E Overview

Synchronous DRAM Module, 8MX72, 6ns, CMOS, PDMA168,

MT5LSDT872AG-10E Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1125505765
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	6 ns
Maximum clock frequency (fCLK)	125 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N168
memory density	603979776 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	72
Humidity sensitivity level	1
Number of terminals	168
word count	8388608 words
character code	8000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX72
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	235
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum standby current	0.01 A
Maximum slew rate	1.35 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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32MB, 64MB, 128MB (x72, SR)

168-PIN SDRAM UDIMM

SYNCHRONOUS

DRAM MODULE

Features

•

168-pin, dual in-line memory module (DIMM)

PC100- and PC133-compliant

Unbuffered

32MB (4 Meg x 72), 64MB (8 Meg x 72), 128MB (16

Meg x 72)

Supports ECC error detection and correction

Single +3.3V power supply

Fully synchronous; all signals registered on positive

edge of system clock

Internal pipelined operation; column address can

be changed every clock cycle

Internal SDRAM banks for hiding row access/precharge

Programmable burst lengths: 1, 2, 4, 8, or full page

Auto Precharge, including CONCURRENT AUTO

PRECHARGE, and Auto Refresh Modes

Self Refresh Mode: 64ms, 4,096-cycle refresh for

32MB and 64MB; 64ms, 8,192-cycle refresh for

128MB

LVTTL-compatible inputs and outputs

Serial Presence-Detect (SPD)

Gold edge contacts

MT5LSDT472A – 32MB

MT5LSDT872A(I) – 64MB

MT5LSDT1672A(I) – 128MB

For the latest data sheet, please refer to the Micron

Web

site:

www.micron.com/products/modules

Figure 1: 168-Pin DIMM (MO-161)

Standard 1.00in. (25.40mm)

Options

• Package

168-pin DIMM (standard)

168-pin DIMM (lead-free)

• Operating Temperature Range

Commercial (0°C to +65°C)

Industrial (-40°C to +85°C)

• Frequency / CAS Latency

7.5ns (133 MHz) / CL = 2

7.5ns (133 MHz) / CL = 3

8ns (100 MHz) / CL = 2

NOTE:

Marking

None

-13E

-133

-10E

Table 1:

Timing Parameters

SETUP

TIME

1.5

2ns

HOLD

TIME

0.8

1ns

CL = CAS (READ) latency

ACCESS TIME

MODULE

CLOCK

MARKING FREQUENCY CL = 2 CL = 3

-13E

-133

-10E

133 MHz

100 MHz

5.4ns

–

9ns

–

5.4ns

7.5ns

1. Consult Micron for product availability.

2. Industrial Temperature option available in -133

speed only.

Table 2:

Address Table

32MB

64MB

4 (BA0, BA1)

128Mb (8 Meg x 16)

4K (A0-A11)

512 (A0-A8)

1 (S0#, S2#)

128MB

4 (BA0, BA1)

256Mb (16 Meg x 16)

8K (A0-A12)

512 (A0-A8)

1 (S0#, S2#)

4 (BA0, BA1)

64Mb (4 Meg x 16)

4K (A0-A11)

256 (A0-A7)

1 (S0#, S2#)

Refresh Count

Device Banks

Device Configuration

Row Addressing

Column Addressing

Module Ranks

32, 64, 128MB x 64 SDRAM DIMM

SD5C4_8_16x72AG.fm - Rev. C 6/04 EN

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

MT5LSDT872AG-10E Related Products

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Description	Synchronous DRAM Module, 8MX72, 6ns, CMOS, PDMA168,	Synchronous DRAM Module, 8MX72, 5.4ns, CMOS, PDMA168,	Synchronous DRAM Module, 8MX72, 6ns, CMOS, PDMA168,	Synchronous DRAM Module, 8MX72, 5.4ns, CMOS, PDMA168,	Synchronous DRAM Module, 16MX72, 5.4ns, CMOS, PDMA168,	Synchronous DRAM Module, 4MX72, 6ns, CMOS, PDMA168,	Synchronous DRAM Module, 4MX72, 5.4ns, CMOS, PDMA168,	Synchronous DRAM Module, 4MX72, 6ns, CMOS, PDMA168,	Synchronous DRAM Module, 4MX72, 5.4ns, CMOS, PDMA168,	Synchronous DRAM Module, 4MX72, 5.4ns, CMOS, PDMA168,
Is it lead-free?	Contains lead	Contains lead	Lead free	Lead free	Contains lead	Contains lead	Contains lead	Lead free	Lead free	Lead free
Is it Rohs certified?	incompatible	incompatible	conform to	conform to	incompatible	incompatible	incompatible	conform to	conform to	conform to
Objectid	1125505765	1125505766	1125505769	1125505771	1125505753	1125505759	1125505761	1125505762	1125505763	1125505764
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	unknown	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	6 ns	5.4 ns	6 ns	5.4 ns	5.4 ns	6 ns	5.4 ns	6 ns	5.4 ns	5.4 ns
Maximum clock frequency (fCLK)	125 MHz	143 MHz	125 MHz	143 MHz	133 MHz	125 MHz	143 MHz	125 MHz	133 MHz	143 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDMA-N168	R-PDMA-N168	R-PDMA-N168	R-PDMA-N168	R-PDMA-N168	R-PDMA-N168	R-PDMA-N168	R-PDMA-N168	R-PDMA-N168	R-PDMA-N168
memory density	603979776 bit	603979776 bit	603979776 bit	603979776 bit	1207959552 bit	301989888 bit	301989888 bit	301989888 bit	301989888 bit	301989888 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	72	72	72	72	72	72	72	72	72	72
Humidity sensitivity level	1	1	1	1	1	1	1	1	1	1
Number of terminals	168	168	168	168	168	168	168	168	168	168
word count	8388608 words	8388608 words	8388608 words	8388608 words	16777216 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	8000000	8000000	8000000	8000000	16000000	4000000	4000000	4000000	4000000	4000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	8MX72	8MX72	8MX72	8MX72	16MX72	4MX72	4MX72	4MX72	4MX72	4MX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	235	235	260	260	235	235	235	260	260	260
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	8192	4096	4096	4096	4096	4096
Maximum standby current	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A
Maximum slew rate	1.35 mA	1.65 mA	1.35 mA	1.65 mA	1.35 mA	0.95 mA	1.15 mA	0.95 mA	1.05 mA	1.15 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	30	30	30	30	30	30

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