YG832C03R datasheet, PDF - EEWORLD Datasheet

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YG832C03R: Description12 A, 30 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size68KB，4 Pages; ManufacturerFUJI; Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/

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YG832C03R Overview

12 A, 30 V, SILICON, RECTIFIER DIODE

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YG832C03R

SCHOTTKY BARRIER DIODE

(30V / 12A TO-22OF15)

Outline Drawings

±0.5

ø3.2

+0.2

-0.1

4.5

±0.2

2.7

±0.2

6.3

2.7

±0.2

3.7

±0.2

1.2

±0.2

Min

Features

Low V

Super high speed switching.

High reliability by planer design.

±0.3

0.7

±0.2

2.54

±0.2

0.6

+0.2

-0

2.7

±0.2

JEDEC

EIAJ

SC-67

Applications

High speed power switching.

Connection Diagram

Maximum Ratings and Characteristics

Absolute Maximum Ratings

Item

Repetitive peak reverse voltage

Repetitive peak surge reverse voltage

Isolating voltage

Average output current

Suege current

Operating junction temperature

Storage temperature

Symbol

RRM

RSM

iso

FSM

stg

tw=500ns, duty=1/40

Terminals to Case,

AC. 1min.

duty=1/2, Tc=118°C

Square wave

Sine wave 10ms

Conditions

Rating

1500

12*

120

+150

-40 to +150

Unit

°C

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Item

Forward voltage drop **

Reverse current **

Thermal resistance

Symbol

th(j-c)

Conditions

=4.0A

RRM

Junction to case

Out put current of centertap full wave connection.

Max.

0.45

5.0

3.5

Unit

°C/W

Rating per element

Mechanical Characteristics

Mounting torque

Weight

Recommended torque

0.3 to 0.5

2.0

N·m

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