<=Ssmi-(!onc{uat
or
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
, fi
ne.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 378-8960
USA
p|Ap CERMAmUM
JUNCTION POWER TRANSISTORS
Conforming in all respects to the latest EIA configuration, these devices fit within the
standard TO-13 case outline and have matched glass-to-metal seals. These transistors,
designed for maximum performance and reliability, may be used in a variety of applica-
tions including relay control and servo amplifiers as well as low speed switching oscil-
lators and audio power applications.
1/4-Z» UNF-ii
2N156
2N158
2N158A
The combined features of welded cases and hermetically sealed glass-to-metal terminals
provide maximum protection against environmental extremes. Widely spaced terminal
lugs are plated to facilitate lead attachment in production and are securely anchored to
prevent possible damage in use. All heat sink surfaces are plated to avoid corrosion,
which would otherwise introduce electrical or thermal discontinuities.
.290 UIM.
FULL THREAD
DESIGN LIMITS
2N1S6
SOLDER
LLJS
Collector to base voltage, V
CB
Collector to emitter voltage, V
CE
Emitter to base voltage, V
Eg
Collector Current, l
c
Operating and Junction Temp, Tj
Thermal Resistance, junction
to mounting base
2N158A
-30
-60 -80 Vdc
-30
-60 -60 Vdc
-15
-30 -30 Vdc
3A
3
3
-65to+100°C
2N15B
3
3
3°C/W
CHARACTERISTICS AT 2S° C
Collector Cut-off Current, I
C
|
0
2N156
2N158
2N158A
V
C B
=-30Vdc
VCB =-60 Vdc
V
C B
=-80Vdc
1.0 mAdc Max.
1.0 mAdc Max.
1.0 mAdc Max.
rrent Gain, Common Emitter, H
K
2N156
2N158A
.'
on /j
-2.0
i
Vdc
25 min.
21 min.
21 min.
0.70 Vdc Max.
-2.0 Vdc 0.85 Vdc Max.
0.85 Vdc Max.
0.75 Vdc Max.
Collector Cut-off Characteristics, I
C
|
0
2N156
V
CB
- -30 Vdc
;
T
A
- 85°C
2N158
VCB = - 60 Vdc
;
T
A
- 85°C
2N158A
V
CB
= - 80 Vdc; T
A
- 85°C
Collector Cut-off Current, !
CE
s
Base to Emitter Voltaw. V
H
10 mAdc Max.
10 mAdc Max.
10 mAdc Max.
2N156 )
2N158
l
c
- 500 mAdc; V
CE
2N158A )
2N156
V
C B
=-30Vdc
1.5 mAdc Max.
2N158
V
CB
- -60 Vdc
1.5 mAdc Max.
2N158A
VCB = -60 Vdc
1.5 mAdc Max.
Collector to Emitter Breakdown Voltage, BV
CEO
2N156
2N158
2N158A
l
c
= 250 mAdc
60 Vdc Min.
mitter Cut-off Current, I
EBO
2N156
V
EB
=-15Vdc
2N158
V
E 8
=-30Vdc
2N158A
V
E B
=-30Vdc
0.5 mAdc Max.
0.5 mAdc Max.
0.5 mAdc Max.
aturation Voltagu, V
CE
(Sat)
2N156 )
2N158 }
l
c
- 1 Adc; I
B
- 150 mA
2N158A j
Thermal Resistance, ©
2NJ56
2N158
2N158A
ut-off Frequency, f
hf
.
2N156
2N158
C
-0.5A;V
C E
- -2V
2N158A
3°C/WMax.
4KcMin.
4KcMin.
4 Kc Min.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftimishcd by NJ Semiconductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discov*?d in its use NI
Semi-C onductors encourages customers to verify that datasheets are current before pfncing orders
Recruitment
京公网安备 11010802033920号
EEWORLD
