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2N4170

Description
Silicon Controlled Rectifiers
CategoryAnalog mixed-signal IC    Trigger device   
File Size86KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

2N4170 Overview

Silicon Controlled Rectifiers

2N4170 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Silicon Controlled Rectifiers
Reverse Blocking Trlode Thyristors
.., multi-purpose PNPN silicon controlled rectifiers suited for Industrial, consumer,
and military applications. Offered In a choice of space-saving, economical pack-
ages for mounting versatility.
• Uniform Low-Level Noise-Immune Gate Triggering — IQT - 10 mA (Typ) @
TC = WC
» Low Forward "On" Voltage — vj - 1 V (Typ) @ 5 Amp @ 25'C
• High Surge-Current Capability —ITSM - 100 Amp Peak
• Shorted Emitter Construction
2N416S
thru
2N4174
2N4184
thru
2N4190
SCRs
8 AMPERES RMS
60 thru 800 VOLTS
-oK
MAXIMUM FIATINGS (Apply over operating temperature range and for all case types
unless otherwise noted.)
Rating
'Peak Repetitive Forward and RevarM Blacking
Voltage, Note 1
2N4168, 84,
ZN4189, 86,
2N4170, 86,
2N4172, 88,
2N4174, 90
Forward Current RMS
•Peak Forward Surge Current
{One cycle, 60 Hi, Tj = -40 to +100-C)
Circuit Fusing
[t - 8.3 ms)
Symbol
Value
50
100
200
400
600
8
100
40
5
0.6
2
10
-40 to +100
-40 to +150
16
Unit
Volts
VORM
or
VRRM
CASE 88-01
Amps
Amps
A2»
ft(RMS)
"TSM
2N4168 thru 2N4174
|2t
•Peak Oats Power
•Average Gate Power
•Peak Gate Currant
Peak Gate Voltage, Note 2
•Operating Temperature Range
•Storage Temperature Range
Stud Torque
PGM
PQ(AV)
Watts
Wan
Amps
Volts
°C
CASB87L-OZ
2N4184 thru 2N4190
IGM
VGM
TJ
Tstg
•c
In. Ib.
\ .SemM. i mduUon
rettntu
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Index Files: 57  2278  1951  2449  1415  2  46  40  50  29 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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