tSe.mL-Cond.uctoi
iPtoc/uch,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
COMPLEMENTARY SILICON TRANSISTORS
General Purpose use In power amplifier and switching circuits.
FEATURES:
•DC Current Gain Specified
HFE=20-80®I
C
=1.0A
* Low Collector-Emitter Saturation Voltage -
v
CE<«rt) = 1-5 V (Max.) O 'c *
5
-0
A
MAXIMUM RATINGS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP
2N4901
2N4902
2N4903
NPN
2N5067
2N5068
2N5069
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base current - Continuous
Total Rower Dissipation QT
C
=25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
2N4901
2N5087
V
c
*>
VCEO
40
40
2N4902
2N5068
60
60
5.0
2N4903
2N6069
Unit
V
V
V
A
5.0 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40-80 Volts
87.5 Watts
80
80
VEB
'c
IB
PD
T,,T,
TO
5.0
10
1.0
TO-3
A
B
87.5
0.5
W
W/°C
°C
c
D
J
U
H
±o—
t
o
- 65 to +200
Characteristic
Thermal Resistance Junction to Case
Symbo
I
Rejc
Max
2.0
Unit
i
&
DIM
A
B
i
^i
^
^-,
T 3
^.-^
A
£r
MAX
I
°c/w
PM1.BA3E
2.EMTTER
COLLECTOR(CASE)
FIGURE -1 POWER DERATING
MILLIMETERS
MIN
100
» 87.5
|62.5
a
OL
51
"\
's
38.75
19.28
7.98
11.18
39.96
22.23
928
12,19
50
25
12.5
Q 37.5
%
£
.
\
^
x.
°-
0
o
25
50
75
100 125 150
175 200
s
C
D
E
F
G
H
1
J
K
25.20
0.92
1.38
26.67
1.06
1.82
29.90
16.64
3.88
10.67
30.40
17.30
4.36
11.18
T
C
,TEMPERATUREC>C)
NJ Semi-Conductors reserves the right to change test conditions, parameters limi
press However NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its u
Sem,-C onductors encourages customers to verify that datasheets are current before placing orders
Nsm
NI
ELECTRICAL CHARACTERISTICS
(T
c
=
25°C unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
( l
c
= 200 mA, I. = 0 )
2N4901 .2N5067
2N4902.2NS068
2N4903.2N5069
VCEOCSUS)
V
Symbol
Min
Max
Unit
40
60
80
mA
1.0
mA
Collector Cutoff Current
(V
CI
= Rated V
CE01
I
S
= 0)
Collector Cutoff Current
( V,.. = Rated V
CE0
. V
BE(on)
= 1.5 V)
( VCE = Rated V
CBO
, V^ = 1 .5 V, T
c
= 150'C )
Collector Cutoff Current
( V^ Rated VCBQ, I
E
= 0)
Emitter Cutoff Current
(V
€ B
-5.0V,I
C
= 0)
ON CHARACTERISTICS
(1)
DC Current Gain
(I
C
=1.0A,V
CE
= 2.0V)
( l
c
» 5.0 A, Vcg = 2.0 V )
Collector-Emitter Saturation Voltage
(I
C
= 1.0A,I
B
»0.1 A)
(l
c
= 5.0 A, IB -1.0 A)
Base-Emitter On Voltage
(I
C
= 1.0A.V
CB
= 2.0V)
DYNAMIC CHARACTERISTICS
Current - Gain -Bandwidth Product (2)
(l
c
=1.0A,V
06
= 10V,f*1.0MHz)
Small-Signal Current Gain
( l
c
= 0.5 A, V
CE
= 1 0 V, f = 1 .0 KHz )
(1) Pulse Test: Pulse width - 300 us , Duty Cycle
<
2.0%
'CEO
"CEX
0.1
on
ICBO
'EBO
mA
0.1
mA
1.0
hFE
20
7.0
80
VCE,-,)
V
0.4
1.5
V
1.2
V
—
f
T
MHz
4.0
20
"
.
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