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2N683

Description
Silicon Controlled Rectifier, 16000mA I(T), 100V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size249KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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2N683 Overview

Silicon Controlled Rectifier, 16000mA I(T), 100V V(DRM)

2N683 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1207928921
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum DC gate trigger current80 mA
Maximum DC gate trigger voltage3 V
Maximum holding current50 mA
On-state non-repetitive peak current150 A
Maximum on-state current16000 A
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Off-state repetitive peak voltage100 V
Trigger device typeSCR
2N682, 2N683, 2N685 – 2N692
and 2N5206
PNPN SILICON, REVERSE-BLOCKING,
POWER TRIODE THYRISTORS
Qualified per MIL-PRF-19500/108
DESCRIPTION
This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability
applications. Microsemi also offers numerous other products to meet higher and lower power
voltage regulation applications.
Available on
commercial
versions
Qualified Levels:
JAN and JANTX
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N682, 2N683, 2N685, 2N687 – 2N692 and 2N5206.
JAN and JANTX qualifications are available per MIL-PRF-19500/108.
RoHS compliant versions available (commercial grade only).
TO-208 / TO-48
Package
APPLICATIONS / BENEFITS
A general purpose, reverse-blocking thyristor.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Gate Voltage
(1)
Maximum Average DC Output Current
(2)
Non-repetitive Peak On-State Current @ t = 7 ms
Notes:
Symbol
T
J
T
STG
V
GM
I
O
I
TSM
Value
-65 to +125
-65 to +150
5
16
150
Unit
C
C
V(pk)
A
A
o
o
1. This average forward current is for a maximum case temperature of +65 °C, and 180 electrical degrees
of conduction.
2. Surge rating is non-recurrent and applies only with device in the conducting state. The peak rate of surge
current must not exceed 100 amperes during the first 10 μs after switching from the off (blocking) state
to the on (conducting) state. This time is measured from the point where the thyristor voltage has
decayed to 90 percent of its initial blocking value.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0249, Rev. 1 (120183)
©2011 Microsemi Corporation
Page 1 of 6

2N683 Related Products

2N683 2N5206 2N682 2N685 2N692
Description Silicon Controlled Rectifier, 16000mA I(T), 100V V(DRM) Silicon Controlled Rectifier Silicon Controlled Rectifier, 16000mA I(T), 50V V(DRM) Silicon Controlled Rectifier, 16000mA I(T), 200V V(DRM) Silicon Controlled Rectifier, 16000mA I(T), 800V V(DRM)
Objectid 1207928921 1207928918 1207928920 1207928922 1207928931
Reach Compliance Code compliant unknown compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Trigger device type SCR SCR SCR SCR SCR
Is it Rohs certified? conform to - conform to conform to conform to
Maximum DC gate trigger current 80 mA - 80 mA 80 mA 80 mA
Maximum DC gate trigger voltage 3 V - 3 V 3 V 3 V
Maximum holding current 50 mA - 50 mA 50 mA 50 mA
On-state non-repetitive peak current 150 A - 150 A 150 A 150 A
Maximum on-state current 16000 A - 16000 A 16000 A 16000 A
Maximum operating temperature 125 °C - 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C - -65 °C -65 °C -65 °C
Off-state repetitive peak voltage 100 V - 50 V 200 V 800 V

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