JMnic
Product Specification
Silicon PNP Power Transistors
2SA1261
DESCRIPTION
・With
TO-220 package
・High
switching speed
・Low
collector saturation voltage
・Complement
to type 2SC3157
APPLICATIONS
・For
high voltage ,high speed and
power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
T
a
=25℃
P
T
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
60
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-7
-10
-20
-3.5
1.5
W
UNIT
V
V
V
A
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1261
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=-5A ;I
B1
=-0.5A;L=1mH
I
C
=-5A; I
B
=-0.5A
I
C
=-5A; I
B
=-0.5A
V
CB
=-100V; I
E
=0
V
CE
=-100V; V
BE
=-1.5V
Ta=125℃
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-5A ; V
CE
=-5V
40
40
20
MIN
-100
-0.6
-1.5
-0.01
-0.01
-1.0
-0.01
200
200
TYP.
MAX
UNIT
V
V
V
mA
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-5A;I
B1
=-I
B2
=-0.5A ,
R
L
=10Ω;V
CC
=-50V
0.5
1.5
0.5
μs
μs
μs
h
FE-2
classifications
M
40-80
L
60-120
K
100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1261
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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