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2SA1832-Y

Description
Audio Frequency General Purpose Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size210KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA1832-Y Overview

Audio Frequency General Purpose Amplifier Applications

2SA1832-Y Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-based maximum capacity7 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment0.1 W
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
VCEsat-Max0.3 V
Base Number Matches1
2SA1832
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1832
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: V
CEO
=
−50
V, I
C
=
−150
mA (max)
Excellent h
FE
linearity: h
FE
(I
C
=
−0.1
mA)/ h
FE
(I
C
=
−2
mA)
= 0.95 (typ.)
High h
FE:
h
FE
= 70~400
Complementary to 2SC4738
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−150
−30
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
TOSHIBA
2-2H1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 2.4 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
70
80
Typ.
−0.1
4
Max
−0.1
−0.1
400
−0.3
7
V
MHz
pF
Unit
μA
μA
Note: h
FE
classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Marking
1
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