JMnic
Product Specification
Silicon PNP Power Transistors
2SB849
DESCRIPTION
・With
TO-3PFa package
・Complement
to type 2SD1110
・Wide
area of safe operation
APPLICATIONS
・For
use in low frequency power
amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-120
-120
-7
-7
80
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB849
MAX
UNIT
V
CEO(BR)
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
-120
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A ;I
B
=-0.5A
-2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-5A ;I
B
=-0.5A
-2.0
V
μA
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-50
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-50
μA
h
FE-1
DC current gain
I
C
=-20mA ; V
CE
=-5V
20
h
FE -2
DC current gain
I
C
=-1A ; V
CE
=-5V
40
200
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
340
pF
f
T
Transition frequency
I
C
=-0.2A ; V
CE
=-5V
14
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB849
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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