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2SB860_2014

Description
Silicon PNP Power Transistors
File Size73KB,4 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
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2SB860_2014 Overview

Silicon PNP Power Transistors

JMnic
Product Specification
Silicon PNP Power Transistors
2SB860
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD1137
APPLICATIONS
・Low
frequency power amplifier TV
vertical deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
40
150
-45~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-4
-4
-5
1.8
W
UNIT
V
V
V
A
A

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Index Files: 1216  2916  2591  2918  1598  25  59  53  33  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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