ne.
,
O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP high-voltage transistors
FEATURES
• Low feedback capacitance.
APPLICATIONS
• Class-B video output stages in television receivers and
for high-voltage IF output stages.
DESCRIPTION
PNP transistors in a TO-126; SOT32 plastic package.
NPN complements: BF469 and BF471.
BF470; BF472
Top view
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to mounting base
base
Fig.1
Simplified outline (TO-126; SOT32) and
symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
BF470
VCEO
BF472
collector-emitter voltage
BF470
BF472
open base
-
-
-
-250
-300
-100
1.8
-
1.8
-
pF
MHz
V
V
mA
W
CONDITIONS
open emitter
-
-
MIN.
MAX.
-250
-300
V
V
UNIT
ICM
Plot
peak collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
T
mb
<114°C
l
c
= -25 mA; V
CE
= -20 V
Ic = i
c
= 0; VCE = -30 V; f = 1 MHz
l
c
= -10 mA; VCE = -10 V; f = 100 MHz
-
50
-
60
hFE
C
re
fl
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
PNP high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (EC 134).
SYMBOL
VCBO
BF470
BF472
VCEO
collector-emitter voltage
BF470
BF472
VEBO
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
mb
<114°C
open collector
open base
PARAMETER
collector-base voltage
open emitter
CONDITIONS
BF470; BF472
MIN.
-
MAX.
-250
-300
-250
-300
-5
-50
-100
-50
1.8
+150
150
+150
UNIT
V
V
V
V
V
mA
mA
mA
W
°C
-
-
-
-
-
-
-65
-
-65
Ic
ICM
IBM
Plot
T
s
tg
Tj
Tgmb
°c
°c
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rfh
j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
CONDITIONS
in free air; note 1
VALUE
UNIT
r
100
20
K/W
K/W
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead
minimum 10 x 10 mm.
CHARACTERISTICS
TJ = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
-10
-10
-50
-
-600
1.8
-
UNIT
IEBO
HFE
VcEsat
C
re
f
T
-
-
emitter cut-off current
-
Ic = 0; V
EB
= -5 V
DC current gain
50
Ic = -25 mA; V
C
E = -20 V
collector-emitter saturation voltage
l
c
= -30 mA; I
B
= -5 mA
-
feedback capacitance
-
lc = "c = 0; VCE = -30 V; f = 1 MHz
transition frequency
l
c
= -10 mA; V
C
E = -10 V; f = 100 MHz 60
IE = 0; VCB = -200 V
IE = 0; VCB = -200 V; Tj = 1 50 °C
nA
HA
nA
mV
PF
MHz
NXP MCU
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