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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
Li
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN RF Transistor
BFQ540
SOT- 8 9 package
DESCRIPTION
• High Gain
• High Output Voltage
• Low Noise
2 : Emitter
3: Collector
B:
APPLICATIONS
• Designed for use in VHP, UHF and CATV amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
bl
VALUE
UNIT
inno
mm
DIM
^
VCBO
Collector-Base Voltage
20
V
VCES
Collector-Emitter Voltage
15
V
WIN
MAX
i. ;o
VEBO
Emitter-Base Voltage
2
V
1.60
0. 52
0.56
b
0.32
0. 36
0.35
1. 10
1. 10
2.30
b:
Collector Current-Continuous
120
mA
c
D
o. i ;
!, 16
1.80
2.60
':
^^
Ic
PC
Collector Power Dissipation
@T
C
=25'C
D:
1.2
W
E
Tj
Junction Temperature
175
r
•c
E:
A
el
L
3. 9 :•
1, cOtyp
2.90
0.90
3. :0
1. 10
T
stg
Storage Temperature Range
-65-150
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BFQ540
MAX
UNIT
V(BR)CES
Collector-Emitter Breakdown Voltage
lc= 40 u A ; RBE= 0
15
V
V(BR)CBO
Collector-Base Breakdown Voltage
lc= 1 0 p A ; I
E
=0
20
V
V(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100uA; l
c
= 0
2
V
ICBO
Collector Cutoff Current
V
CB
= 8V; I
E
= 0
0.05
uA
IEBO
Emitter Cutoff Current
VEB= 1V; l
c
= 0
0.2
uA
hpE
DC Current Gain
lc= 40mA ; V
CE
= 8V
60
250
fl
Ore
Current-Gain—Bandwidth Product
l
c
= 40mA ; V
CE
= 8V; f= 1 GHz
9
GHz
Feedback Capacitance
l
E
=0;V
C
B=8V;f=1MHz
0.9
PF
1 S
2
ie I
2
Insertion Power Gain
lc= 40mA ; V
CE
= 8V; f= 900MHz
12
13
dB
NF
Noise Figure
l
c
= 40mA ; V
CE
= 8V; f= 900MHz
1.9
2.4
dB
V,
:E
£9V.
10
3
1.0
0.8
(mAi
Id
2
0.6
0.4
0.2
10
50
100
150
T
,
:
,
a
200
Power derating curve
J'
1
10
SOAR
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