^zmi-L.onau.cto'i
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, U
na.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN RF Transistor
BFR520
DESCRIPTION
• High Power Gain
• High Current Gain Bandwidth Product
• Low Noise Figure
^^
SOT- 2 3 package
APPLICATIONS
• Designed for RF frontend in wideband applications in the
GHz range.such as analog and digital cellular telephones,
cordless.
-H,M
^•111
6
Marking
f
l
T
1 : Base
~ •
Emitter
3 ; Collector
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
LI' I U:^L
1
L—
I*
D
*I
— -|
/
Lp
L
-1
n
1—1
B c
4 I
\
VCBO
Collector-Base Voltage
20
V
L_l
T
-
1
.—I =J |
ML
1L
4
M
VCES
Collector-Emitter Voltage
15
V
mm
DIM
MIN
0. 37
1,19
2. 10
0.89
1. 78
2.65
1. 10
0. -!5
MAX
0.51
1. 10
2,50
1.05
2.05
3.05
1.20
0.61
0. ITS
A
B
VEBO
Emitter-Base Voltage
2.5
V
Ic
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25°C
Junction Temperature
70
mA
C
D
PC
0.3
W
IL-
K
Tj
175
'C
K
L
T
stg
Storage Temperature Range
-65-150
°C
M
0.076
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BFR520
MAX
UNIT
ICBO
Collector Cutoff Current
V
CB
= 6V; I
E
= 0
0.05
nA
hFE
DC Current Gain
lc= 20mA ; V
C
e= 6V
60
250
fi
Current-Gain — Bandwidth Product
lc= 20mA ; V
CE
= 6V; f= 1GHz
9
GHz
COB
Output Capacitance
I
E
= 0 ; V
GB
= 6V; f= 1 MHz
0.5
PF
PG
Power Gain
l
c
= 20mA ; V
CE
= 6V; f= 900MHz
15
dB
PG
Power Gain
l
c
= 20mA ; V
CE
= 6V; f= 2GHz
9
dB
1 S
21e
I
2
Insertion Power Gain
l
c
= 20mA ; V
CE
= 6V; f= 900MHz
13
14
dB
NF
Noise Figure
l
c
= 5mA ; VCE= 6V; f= 900MHz
1.1
1.6
dB
NF
Noise Figure
lc= 20mA ; V
CE
= 6V; f= 900MHz
1.6
2.1
dB
400
P
tot
(mWj
250
V
CE
=6V
200
300
\0
200
100
150T
150 'C)200
(
S C
100
100
50
0"-^
10
l
c
(mA)
102
Power derating curve
DC current gain as a function of
collector
current
Microcontroller MCU
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