tJ
,
L)n.c.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
Rugged Triple-Diffused Planar Construction
9 A Continuous Collector Current
1000 Volt Blocking Capability
B C
SOT-92 PACKAGE
(TO
P VIEW)
1
\
C C
tc
3
/
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V
BE
= -2.5 V)
Collector-emitter voltage (R
BE
= 10 fi)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1 )
Continuous base current
Peak base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
< 5 ms, duty cycle < 2%.
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
VCEO
VCEX
VCER
SYMBOL
VALUE
850
1000
UNIT
V
V
V
A
A
A
A
W
850
1000
400
450
9
15
3
6
120
Ic
'CM
IB
'BM
Ptot
T
J
-65to+150
-65 to
+150
°C
T
s
,
g
°c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
CEO(sus)
(BR)EBO
sustainin
g
V0
|tage
TEST CONDITIONS
l
c
= 200 mA
I
E
=
50 mA
1 = 25
mH
l
c
= 0
V
BE
= 0
V
6E
= 0
V
BE
= 0
V
BE
= 0
R
BE
= 10Q
R
BE
= 10n
R
BE
= 10n
R
BE
= 1 0 O
l
c
= 0
WIN
BUV47
TYP
MAX
UNIT
(see Note 2)
(see Note 3)
400
450
7
30
0.15
0.15
1.5
1.5
0.4
0.4
3.0
3.0
1
1.5
3.0
1.6
8
105
V
V
breakdown
Base-emitter
voltage
Collector-emitter
V
CE
= 850V
V
CE
= 1000V
V
C E
= 850V
V
CE
= 1 000 V
V
C E
= 850V
'
CER
Collector-emitter
cut-off current
Emitter cut-off
'
EBO
CE(sat)
CES
BUV47
BUV47A
T
C
= 125°C
T
c
= 1 25"C
BUV47
BUV47A
BUV47
BUV47A
T
C
= 125°C
T
c
= 1 25°C
BUV47
BUV47A
cut-off current
mA
V
CE
= 1000V
V
C E
= 850V
V
CE
= 1 000 V
V
EB
=
5V
mA
current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
mA
V
V
MHz
PF
!;: 2.5 A I::
I" ^™»*««v
I
B
=
1A
l
c
=
5A
(see Notes 3 and 4)
BE(sat)
'
C
ob
V
CE
=
V
CB
=
10V
20V
l
c
= 0.5 A
l
c
= 0
f=
1 MHz
f = 0.1 MHz
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, t
p
= 300 us, duty cycle < 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
eJC
Junction to case thermal resistance
MIN
TYP
MAX
1
UNIT
"C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
Is
t
f
Turn on time
Storage time
Fall time
V
- 150 V
(see Figures 1 and 2)
TEST CONDITIONS t
MIN
TYP
MAX
1.0
3.0
0.8
UNIT
us
us
us
* Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
ts
v
If,
Voltage storage time
Current fall time
TEST CONDITIONS
t
MIN
TYP
MAX
4.0
0.4
UNIT
i
c
= 5A
T
C
= 100°C
i
B(0
n) = i A
(see Figures 3 and 4)
v
BE(off)
= -5V
us
us
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
+25 V
tp = 20 us
Duty cycle = 1 %
V-) = 15 V, Source Impedance = 50 a
Figure 1. Resistive-Load Switching Test Circuit
C-f-90%
A-B = t
d
B - C = t
r
E-F = t,
D - E = t
s
A - C = t
on
90%-VE
B
•+•
10%
10%-\-F
0%
D - F = t
off
>2A/ns
0%
B(off)
Figure 2. Resistive-Load Switching Waveforms
BUV47, BU\M7A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
33
a
VGen
68 Q
Vclamp=400V
Adjust pw to obtain l
c
For l
c
< 6 A V
cc
= 50 V
Forl
c
>6A
V
CC
= 100V
100 n
BE(off)
Figure 3. Inductive-Load Switching Test Circuit
'B(on)
A - B = t
sv
B - C = t
rv
D - E = I;
,
E - F = t
ti
B - E = t,
n
A (90%)
Base Current
C-f-90%
B •/- 10%
CE
D (90%)
Collector Voltage
E (10%)
'C(on)
Collector Current
F
(2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t
r
< 15 ns, R
in
> 10 ft C
in
< 11.5 pF.
B. Resistors must be noninductive types.
Figure 4. Inductive-Load Switching Waveforms
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