FES16AT thru FES16JT
®
FES16AT thru FES16JT
Pb Free Plating Product
Pb
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diode
Features
Glass passivated chip junction
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-220AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
.038(0.96)
.019(0.50)
.50(12.7)MIN
.177(4.5)MAX
.624(15.87)
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Positive
Suffix "T"
Negative
Suffix "TR"
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@ 16 A
Maximum Reverse Current @ Rated VR
T
A
=25
℃
T
A
=100
℃
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θjC
T
J
T
STG
FES
FES
FES
FES
FES
16AT 16BT 16CT 16DT 16FT
FES
FES
16GT 16HT
FES
16JT
Unit
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
16
300
210
300
400
280
400
500
350
500
600
420
600
200
0.975
10
400
35
130
1
- 65 to + 150
- 65 to + 150
100
1.3
1.7
V
uA
nS
pF
℃
/W
℃
℃
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
FES16AT thru FES16JT
®
RATINGS AND CHARACTERISTIC CURVES (FES16AT thru FES16JT)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
1000
FIG.1 FORWARD CURRENT DERATING CURVE
20
AVERAGE FORWARD
A
CURRENT (A)
16
12
8
4
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
CASE TEMPERATURE (
o
C)
INSTANTANEOUS REVERSE CURRENT(uA)
100
TA=100℃
10
TA=75℃
1
250
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3mS Single Half Sine Wave
JEDEC Method
0.1
0
20
40
60
TA=25℃
PEAK FORWARD SURGE
A
CURRENT (A)
200
150
100
50
0
1
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL FORWARD CHARACTERISRICS
100
FES16AT-FES16DT
INSTANTANEOUS FORWARD CURRENT (A)
10
FIG. 4 TYPICAL JUNCTION CAPACITANCE
300
250
CAPACITANCE (pF)
TA=25℃
1
FES16FT-FES16GT
200
150
100
50
0
1
10
FES16AT-FES16DT
0.1
FES16HT-FES16JT
FES16FT-FES16JT
TA=25℃
Pulse Width=300us
1% Duty Cycle
0.01
100
1000
0.4
0.6
REVERSE VOLTAGE (V)
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Power technology
京公网安备 11010802033920号
EEWORLD
