FES16GT datasheet, PDF - EEWORLD Datasheet

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FES16GT: Description16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC; Categorysemiconductor Discrete semiconductor; File Size409KB，3 Pages; ManufacturerThinki Semiconductor Co.,Ltd.; Websitehttp://www.thinkisemi.com/

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FES16GT Overview

16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC

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FES16AT thru FES16JT

Pb Free Plating Product

16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diode

Features

Glass passivated chip junction

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

TO-220AC

.419(10.66)

.387(9.85)

.139(3.55)

MIN

Unit : inch (mm)

.196(5.00)

.163(4.16)

.054(1.39)

.045(1.15)

.269(6.85)

.226(5.75)

Automotive Inverters/Solar Inverters

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

Case: Heatsink TO-220AC

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.1 gram approxiamtely

.038(0.96)

.019(0.50)

.50(12.7)MIN

.177(4.5)MAX

.624(15.87)

.548(13.93)

.025(0.65)MAX

.1(2.54)

Positive

Suffix "T"

Negative

Suffix "TR"

Maximum Ratings and Electrical Characteristics

Rating at 25

℃

ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current, 8.3 ms Single Half Sine-

wave Superimposed on Rated Load (JEDEC method)

Maximum Instantaneous Forward Voltage (Note 1)

@ 16 A

Maximum Reverse Current @ Rated VR

=25

℃

=100

℃

Symbol

RRM

RMS

F(AV)

FSM

Trr

θjC

STG

FES

16AT 16BT 16CT 16DT 16FT

FES

16GT 16HT

FES

16JT

Unit

100

150

105

150

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

200

0.975

400

130

- 65 to + 150

100

1.3

1.7

℃

Maximum Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Typical Thermal Resistance

Operating Temperature Range

Storage Temperature Range

Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle

Note 2: Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Rev.04/2014

Page 1/2

http://www.thinkisemi.com/

FES16GT Related Products

	FES16GT	FES16AT	FES16BT	FES16CT	FES16DT	FES16FT	FES16HT	FES16JT
Description	16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC	16 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC	16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC	16 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC	16 A, SILICON, RECTIFIER DIODE, TO-220	16 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC	16 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC	16 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

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