IR7106SPBF
700V High and Low Side Driver
Features
Drives IGBT/MOSFET power devices
Gate drive supplies up to 20V per channel
Undervoltage lockout for V
CC
for V
BS
3.3V, 5V , 15V input logic compatible
Tolerant to negative transient voltage
Designed for use with bootstrap power supplies
Matched propagation delays for all channels
-40°C to 125°C operating range
RoHS compliant
Lead-Free
Product Summary
V
OFFSET
V
OUT
I
o+
& I
o-
(typ.)
t
ON
& t
OFF
(typ.)
≤ 700V
10V – 20V
200mA / 350mA
220ns & 200ns
Description
The IR7106S is a high voltage, high speed, power
MOSFET and IGBT gate driver with independent high-side
and low-side output channels. This IC is designed to be
used with low-cost bootstrap power supplies. Proprietary
HVIC and latch immune CMOS technologies have been
implemented in a rugged monolithic structure. The floating
logic input is compatible with standard CMOS or LSTTL
outputs (down to 3.3V logic). The output drivers feature a
high-pulse current buffer stage designed for minimum driver
cross-conduction. Propagation delays are matched to
simplify the HVIC’s use in high frequency applications. The
floating channel can be used to drive N-channel power
MOSFETs or IGBTs in the high-side configuration, which
operates up to 700V.
Package Options
8-Lead SOIC
Typical Applications
Appliance motor drives
Servo drives
Micro inverter drives
General purpose three phase inverters
Base Part Number
IR7106SPBF
IR7106SPBF
Package Type
SO8N
SO8N
Standard Pack
Form
Tube
Tape and Reel
Quantity
95
2500
Orderable Part Number
IR7106SPBF
IR7106STRPBF
1
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© 2015 International Rectifier
June 18, 2015
IR7106SPBF
Typical Connection Diagram
Up to 700V
V
CC
V
CC
HIN
LIN
HIN
LIN
COM
V
B
HO
V
S
LO
To Load
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please refer tour
Application Notes & DesignTips for proper circuit board layout.
2
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© 2015 International Rectifier
June 18, 2015
IR7106SPBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM unless otherwise stated in the table. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions.
Symbol
V
CC
V
IN
V
B
V
S
V
HO
V
LO
COM
dV
S
/dt
P
D
Rth
JA
T
J
T
S
T
L
†
Definition
Low side supply voltage
Logic input voltage
High-side floating well supply voltage
High-side floating well supply return voltage
Floating gate drive output voltage
Low-side output voltage
Power ground
Allowable V
S
offset supply transient relative to V
SS
Package power dissipation @ T
A
+25ºC
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
COM - 0.3
-0.3
V
B
- 25
V
S
- 0.3
COM - 0.3
V
CC
- 25
—
—
—
—
-55
—
Max.
25
†
Units
V
CC
+ 0.3
725
V
B
+ 0.3
V
B
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
50
0.625
200
150
150
300
ºC
V/ns
W
ºC/W
V
All supplies are tested at 25V.
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with supplies of (V
CC
- COM) = (V
B
- V
S
) = 15V.
Symbol
V
CC
V
IN
V
B
V
S
V
HO
V
LO
COM
T
A
†
Definition
Low-side supply voltage
HIN, LIN, & EN input voltage
High-side floating well supply voltage
High-side floating well supply offset voltage
Floating gate drive output voltage
Low-side output voltage
Power ground
Ambient temperature
†
Min
10
0
V
S
+10
COM-5
V
s
COM
-5
-40
†
Max
20
V
CC
V
S
+20
700
V
B
V
CC
5
125
Units
V
ºC
Logic operation for V
S
of –5 V to 700V. Logic state held for V
S
of –5 V to –V
BS
. Please refer to Design Tip DT97-3 for
more details.
3
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© 2015 International Rectifier
June 18, 2015
IR7106SPBF
Static Electrical Characteristics
(V
CC
- COM) = (V
B
- V
S
) = 15V. T
A
= 25 C unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM. The
V
O
and I
O
parameters are referenced to respective V
S
and COM and are applicable to the respective output leads HO or LO.
The V
CCUV
parameters are referenced to COM. The V
BSUV
parameters are referenced to V
S
.
o
Symbol
V
BSUV+
V
BSUV-
V
BSUVHY
V
CCUV+
V
CCUV-
V
CCUVHY
I
LK
I
QBS
I
QCC
V
OH
V
OL
I
o+
I
o-
V
IH
V
IL
I
IN+
I
IN-
Definition
V
BS
supply undervoltage positive going threshold
V
BS
supply undervoltage negative going threshold
V
BS
supply undervoltage hysteresis
V
CC
supply undervoltage positive going threshold
V
CC
supply undervoltage negative going threshold
V
CC
supply undervoltage hysteresis
High-side floating well offset supply leakage
Quiescent V
BS
supply current
Quiescent V
CC
supply current
High level output voltage drop, V
BIAS
-V
O
Low level output voltage drop, V
O
Output high short circuit pulsed current
Output low short circuit pulsed current
Logic “1” input voltage
Logic “0” input voltage
Input bias current (HO = High)
Input bias current (HO = Low)
Min.
8
7.4
0.3
8
7.4
0.3
—
—
—
—
—
120
250
2.9
—
—
—
Typ.
8.9
8.2
0.7
8.9
8.2
0.7
—
75
120
0.80
0.30
200
350
3
—
5
—
Max.
9.8
9
—
9.8
9
—
50
130
180
1.4
0.6
—
Units
Test Conditions
V
V
B
= V
S
= 700V
µA
V
IN
= 0V or 5V
I
O
= 20mA
V
O
= 0V,
PW ≤ 10µs
V
O
= 15V,
PW ≤ 10µs,
V
CC
= 10V to 20V
V
IN
= 5V
V
IN
= 0V
V
mA
—
—
0.8
20
2
V
µA
Dynamic Electrical Characteristics
V
CC
= V
B
= 15V, V
S
= COM, T
A
= 25 C, and C
L
= 1000pF unless otherwise specified.
o
Symbol
t
ON
t
OFF
t
R
t
F
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Delay matching time (t
ON
, t
OFF
)
Min.
—
—
—
—
—
Typ.
220
200
150
50
0
Max.
300
280
220
80
50
Units
Test Conditions
V
S
= 0V
V
S
= 0V or 700V
ns
V
S
= 0V
4
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© 2015 International Rectifier
June 18, 2015
IR7106SPBF
Functional Block Diagram
V
B
UV DETECT
R
HV LEVEL
SHIFTER
PULSE
FILTER
HO
Q
R
S
HIN
VSS/COM
LEVEL
SHIFT
PULSE
GENERATOR
V
S
V
CC
UV DETECT
LO
VSS/COM
LEVEL
SHIFT
LIN
DELAY
COM
5
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© 2015 International Rectifier
June 18, 2015
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