20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Triacs
Silicon Bidirectional Triode Thyristors
... designed primarily for industrial and military applications for the control of ac
loads In applications such as power supplies, heating controls, motor controls,
welding equipment and power switching systems; or wherever full-wave, silicon
gate controlled solid-state devices are needed.
• Glass Paaslvated Junctions and Center Gate Fire
• Press Fit Stud — T6400
Stud —T6410
Isolated Stud — T6420
• Gate Triggering Guaranteed in All 4 Quadrants
T6400
T6410
T6420
Series
TRIACs
40 AMPERES RMS
200 thru 800 VOLTS
M
W-T>
0
MAXIMUM RATINGS
Rating
Peak Repetitive Off-State Voltage, Note 1
(Tj = -65 to + 110°c) Gate Open
T6400B, T6410B, T6420B
T6400D, T6410D, T6420D
T6400M, T6410M, T6420M
T6400N, T6410N, TS420N
On-State Current RMS
(Conduction Angle = 360")
TC (Pressfit) = 70°C
TC (Stud) - 65°C
Symbol
Value
Unit
Volts
200
400
600
800
VDRM
ITIRMSI
iTSM
|2t
40
300
460
40
Amps
Amps
A2s
T6410
STUD
Peak Surge Current (Non-Repetitive)
(One Full Cycle, 60 Hz)
Circuit Fusing
(Tj = -65 to + 110"C,t = 1.26 to 10ms)
Peak Gate Power
(Pulse Width •=• 10
pa)
Average Gate Power
Peak Gate Current (Pulse Width = 1 /is)
Operating Temperature Range
Storage Temperature Range
Stud Torque
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case Pressfit
Stud
Isolated Stud
PGM
P
G(AV)
Watts
Watt
Amps
T6400
PRESS FIT
0.7B
12
IGTM
TC
T
stg
-65 to +110
-65 to +150
30
•c
•c
in. Ib.
Unit
T6420
ISOLATED STUD
-
Symbol
Max
"fljc
0.8
0.9
1
°c/w
Note 1. Ratings apply for opan gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated blocking
voltage.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
T8400 • T6410 • T6420 Series
ELECTRICAL CHARACTERISTICS
(T
c
= 25°C unless otherwise noted.)
Characteristic
Peak Forward or Reverse Blocking Current
(Rated VDRM or VRRM, gate open) Tj = 25°C
Tj = 110°C
Maximum On-State Voltage (Either Direction)
(I
T
= 100 A Peak)
Gate Trigger Current (Continuous do), Note 1
(VD = 12 Vdc, RL = 30 Ohms
VMT2I+). VG< + )
VMT2( + )' VG(-)
VMT2(-)-VG(-|
VMT2(-)'
V
G( + )
VMT2( + ). VG( + ), V
M
T2(-).VG(-). TC - -65"C
Symbol
Mln
-
Typ
_
Max
10
4
Unit
MA
mA
IDRM, IRRM
VTM
"CT
' —
1.5
2
Volts
mA
15
30
20
40
50
80
SO
80
125
240
-
VMTZI + ). VG< - ). VMT2( - ), v
G
( + j, TC - - 65-c
Gate Trigger Voltage (Continuous dc)
(Vo = 12 Vdc, RL - 30 Ohms, TC = 25"C
T
C
= ~65°C
(Vo - Rated VDRM- RL -
12
5 Ohms, TC = 110°C)
Holding Current (Either Direction)
(V
D
= 12 Vdc, Gate Open)
(Initiating Current = 500 mA)
VGT
1.35
Volts
2.5
3.4
0.2
IHO
TC - 25°C
T
C
- -65«C
mA
-
25
1.7
5
60
100
Gate Controlled Turn-On Time
(Rated VQRM, If = 60 A, IQJ = 200 rnA, Rise Time - 0.1 fis)
Critical Rate of Rise of Commutation Voltage, On-State Conditions
(di/dt = 22 A/ms, Gate Unenerglzed, VQ - Rated VDRQM-
IT(RMS) = ^O A, T
C
(Pressfit) = 70'C)
T
C
(Stud) - B5"C
Note 1. All voltage polarities referenced to main terminal 1.
«gt
dv/dt(c)
~~
3
MS
V//is
FIGURE 1 - ON-STATE POWER DISSIPATION
CURRENT WAVEFORM • SINUSOIDAL
LOAD "
RESISTIVE
OR INDUCTIVE
CONDUCTION ANGLE-
T£, MAXIMUM ALLOWABLE
"III
CASE TEMPERATURE (°CI
FIGURE 2 - RMS CURRENT DERATING
I
s s s s s l i i
CURRENT WAVEFORM SINUSOI
OAL
-LOAD « RESISTIVE DR INDUCTIV
CONDUCTION ANGLE » 360"
I
•
^
-^
71
10
r
—"III
%
ISO
ATED
STU
JTYPE
^.PRE!
S-FIT 1
VPES
s/
S*
•UDT1
PES
o
,80"
| y
360°
CONDUCTION A
4GLE
•»l*»lll
i ^—
^
KS
^
10
2D
30
20
30
40
IT(RMS). FULLCYCLE RMS ON-STATE CURRENT (AMP)
ITIRMSI. RM$ ON STATE CURRENT IAMPI