ZXMC3A18DN8
Complementary 30V enhancement mode MOSFET
Summary
N-Channel = V
(BR)DSS
= 30V : R
DS(on)
= 0.025 ; I
D
= 7.6A
P-Channel = V
(BR)DSS
= -30V : R
DS(on)
= 0.035 ; I
D
= -6.3A
Description
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power
management applications.
D1
D2
G1
S1
Q1 N-Channel
G2
S2
Q2 P-Channel
Features
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
S1
G1
S2
D1
D1
D2
D2
Applications
•
•
Motor Drive
LCD backlighting
G2
SO8
Ordering information
Device
ZXMC3A18DN8TC
Reel size
(inches)
13
Tape width
(mm)
12
Quantity
per reel
2500
Device marking
ZXMC
3A18
Issue 2 - September 2007
© Zetex Semiconductors plc 2007
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ZXMC3A18DN8
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (V
GS
= 10V; T
amb
=25°C)
(b)(d)
(V
GS
= 10V; T
amb
=70°C)
(b)(d)
(V
GS
= 10V; T
amb
=25°C)
(a)(d)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
amb
=25°C
(a)(d)
Linear derating factor
Power dissipation at T
amb
=25°C
(a)(e)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)(d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
I
DM
I
S
I
SM
P
D
Symbol
V
DSS
V
GS
I
D
N-channel P-channel
30
±20
7.6
6.1
5.8
37
3.6
37
1.25
10
1.8
14
2.1
17
-55 to +150
-30
±20
-6.3
-5.0
-4.8
-30
3.2
30
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Unit
V
V
A
Thermal resistance
Parameter
Junction to ambient
(a)(d)
Junction to ambient
(a)(e)
Junction to ambient
(b)(d)
Symbol
R
JA
R
JA
R
JA
Value
100
70
60
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300 s, d<= 0.02. Refer to
transient thermal impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
Issue 2 - September 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com
ZXMC3A18DN8
Characteristics
Issue 2 - September 2007
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ZXMC3A18DN8
N-channel
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static
Drain-source breakdown
voltage
Gate-body leakage
V
(BR)DSS
30
0.5
100
1.0
0.025
0.030
17.5
S
V
A
nA
V
I
D
= 250 A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 5.3A
V
DS
= 15V, I
D
= 5.8A
Symbol
Min.
Typ.
Max. Unit Conditions
Zero gate voltage drain current I
DSS
I
GSS
R
DS(on)
Gate-source threshold voltage V
GS(th)
Static drain-source on-state
resistance
(*)
Forward transconductance
(*)(‡)
g
fs
Dynamic
(‡)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
(†) (‡)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
(*)
Reverse recovery time
(‡)
Reverse recovery charge
(‡)
V
SD
t
rr
Q
rr
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
1800
289
178
pF
pF
pF
V
DS
= 25V, V
GS
=0V
f=1MHz
5.5
8.7
33
8.5
19.4
36
5.5
7.0
0.95
20.5
41.5
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
V
DD
= 15V, I
D
= 6A
R
G
≅
6.0 , V
GS
= 10V
V
DS
= 15V, V
GS
= 5V
I
D
= 3.5A
V
DS
= 15V, V
GS
= 10V
I
D
= 3.5A
T
j
=25°C, I
S
= 6A, V
GS
=0V
T
j
=25°C, I
S
= 6A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 2 - September 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
ZXMC3A18DN8
Typical characteristics
Issue 2 - September 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com