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ZXMC3A18DN8_15

Description
Complementary 30V enhancement mode MOSFET
File Size682KB,13 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

ZXMC3A18DN8_15 Overview

Complementary 30V enhancement mode MOSFET

ZXMC3A18DN8
Complementary 30V enhancement mode MOSFET
Summary
N-Channel = V
(BR)DSS
= 30V : R
DS(on)
= 0.025 ; I
D
= 7.6A
P-Channel = V
(BR)DSS
= -30V : R
DS(on)
= 0.035 ; I
D
= -6.3A
Description
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power
management applications.
D1
D2
G1
S1
Q1 N-Channel
G2
S2
Q2 P-Channel
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
S1
G1
S2
D1
D1
D2
D2
Applications
Motor Drive
LCD backlighting
G2
SO8
Ordering information
Device
ZXMC3A18DN8TC
Reel size
(inches)
13
Tape width
(mm)
12
Quantity
per reel
2500
Device marking
ZXMC
3A18
Issue 2 - September 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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