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B5817WS-TP

Description
1 A, 20 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size335KB,4 Pages
ManufacturerETC2
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B5817WS-TP Overview

1 A, 20 V, SILICON, SIGNAL DIODE

B5817WS-TP Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage20 V
Maximum average forward current1 A
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
B5817WS
Thru
B5819WS
1 Amp Schottky
Barrier Rectifier
20 - 40 Volts
SOD-323
A
B
Features
Halogen
free available upon request by adding suffix "-HF"
Guard Ring Protection
Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters
High Surge Current Capability
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/RoHS Compliant("P" Suffix
designates RoHS Compliant. See ordering information)
Maximum Ratings
Operating Temperature: -65 to +125
Storage Temperature: -65 to +150
Maximum Thermal Resistance; 500 /W Junction To Ambient
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
40V
Maximum
DC
Blocking
Voltage
20V
30V
40V
C
E
MCC
Part
Number
B5817WS
B5818WS
B5819WS
Device
Marking
SJ
SK
SL
Maximum
RMS
Voltage
14V
21V
28V
H
D
G
J
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
B5817WS
B5818WS
B5819WS
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical junction
capacitance
Notes:
DIM
A
B
C
D
E
G
H
J
I
F(AV)
I
FSM
1.0A
10A
0.45V
0.55V
0.60V
0.75V
0.875V
0.90V
1mA
T
c
= 90
8.3ms, half sine
I
FM
= 1.0A;
T
J
= 25 (Note 1)
I
FM
= 3A;
T
J
= 25 (Note 1)
T
A
= 25
V
F
INCHES
MIN
MAX
.090
.107
.063
.071
.045
.053
.031
.045
.010
.016
.004
.018
.004
.010
-----
.006
MM
MIN
2.30
1.60
1.15
0.80
0.25
0.10
0.10
-----
MAX
2.70
1.80
1.35
1.15
0.40
0.45
0.25
0.15
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.074"
I
R
C
J
120pF
Measured at
1.0MHz , V
R
=4.0V
0.027”
1.
Pulse Test: Pulse Width 300usec, Duty Cycle 2%
0.022”
Revision:
B
www.mccsemi.com
1 of
3
2013/01/01

B5817WS-TP Related Products

B5817WS-TP B5817WS B5818WS B5819WS
Description 1 A, 20 V, SILICON, SIGNAL DIODE 1 A, 20 V, SILICON, SIGNAL DIODE 1 A, 30 V, SILICON, SIGNAL DIODE 1 A, 40 V, SILICON, SIGNAL DIODE

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