EEWORLDEEWORLDEEWORLD

Part Number

Search

MMFT3055ET1

Description
1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
CategoryDiscrete semiconductor    The transistor   
File Size201KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

MMFT3055ET1 Overview

1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA

MMFT3055ET1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-261AA
package instructionCASE 318E-04, 4 PIN
Contacts4
Manufacturer packaging codeCASE 318E-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)1.7 A
Maximum drain current (ID)1.7 A
Maximum drain-source on-resistance0.15 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Humidity sensitivity level3
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MMFT3055E
Power MOSFET
1.7 Amp, 60 Volts
N−Channel TMOS E−FETt SOT−223
This advanced E−FET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commutation
modes. This new energy efficient device also offers a drain−to−source
diode with a fast recovery time. Designed for low voltage, high speed
switching applications in power supplies, dc−dc converters and PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT−223 package which is
designed for medium power surface mount applications.
Features
http://onsemi.com
V
DSS
60 V
R
DS(ON)
TYP
150 mΩ
N−Channel
2,4
D
I
D
MAX
1.7 A
Silicon Gate for Fast Switching Speeds
Low R
DS(on)
— 0.15
Ω
max
The SOT−223 Package can be Soldered Using Wave or Reflow. The
1
G
S
3
4
1
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT3055ET1 to order the 7 inch/1000 unit reel.
Use MMFT3055ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage− Continuous
Drain Current
Continuous
Drain Current
Single Pulse (t
p
10
ms)
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C (Note 1)
Operating and Storage Temperature
Range
Single Pulse Drain−to−Source Avalanche
Energy
Starting T
J
= 25°C
(V
DD
= 60 Vdc, V
GS
= 10 Vdc, Peak
I
L
= 1.7 Apk, L = 0.2 mH, R
G
= 25
Ω
)
Thermal Resistance
Junction to Ambient (surface mounted)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
Symbol
V
DSS
V
GS
I
DM
P
D
T
J
, T
stg
E
AS
168
°C/W
°C
I
D
Value
60
±
20
1.7
6.8
0.8
6.3
−65
to
150
Unit
Vdc
Vdc
Adc
Apk
Watts
mW/°C
°C
mJ
MARKING
DIAGRAM
2
3
SOT−223
CASE 318E
STYLE 3
L
WW
= Location Code
= Work Week
3055
LWW
PIN ASSIGNMENT
4
Drain
1
2
3
R
θJA
T
L
156
260
Gate
Drain
Source
ORDERING INFORMATION
Device
MMFT3055ET1
MMFT3055ET3
Package
SOT−223
SOT−223
Shipping
1000 Tape & Reel
4000 Tape & Reel
1. Power rating when mounted on FR−4 glass epoxy printed circuit board
using recommended footprint.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 5
1
Publication Order Number:
MMFT3055E/D

MMFT3055ET1 Related Products

MMFT3055ET1 MMFT3055E MMFT3055ET3
Description 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Is it Rohs certified? incompatible incompatible incompatible
Maker ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code TO-261AA TO-261 TO-261AA
package instruction CASE 318E-04, 4 PIN CASE 318E-04, 4 PIN CASE 318E-04, 4 PIN
Contacts 4 4 4
Manufacturer packaging code CASE 318E-04 CASE 318E-04 CASE 318E-04
Reach Compliance Code not_compliant _compli _compli
ECCN code EAR99 EAR99 EAR99
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 1.7 A 1.7 A 1.7 A
Maximum drain current (ID) 1.7 A 1.7 A 1.7 A
Maximum drain-source on-resistance 0.15 Ω 0.15 Ω 0.15 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-261AA TO-261 TO-261AA
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 4 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240 235
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.8 W 0.8 W 0.8 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
What are better ways to power automated test equipment to increase throughput and uptime?
Semiconductor manufacturers are placing greater demands on automatic test equipment (ATE) companies to quickly and reliably design test systems that meet the growing demand for ICs, with minimal incre...
eric_wang Test/Measurement
[Beineng cost-effective ATSAMD51 evaluation board] Benchmark performance test 4: concurrent computing benchmark test livermore_loops
Preface Livermore loops[1] (also known as the Livermore Fortran kernel or LFK) are a benchmark for computer concurrent computing. process Add code Get the code http://www.roylongbottom.org.uk/classic_...
qinyunti Microchip MCU
Live Review: November 23, Renesas Electronics RA Series Product Development Tool FSP4.0.0 New Features Introduction
Live broadcast time: November 23 (Wednesday) 10:00-11:30 amLive broadcast topic: Introduction to new features of FSP4.0.0 of Renesas Electronics RA series product development toolsWatch replay: Click ...
EEWORLD社区 Embedded System
[Beineng cost-effective ATSAMD51 evaluation board] Benchmark performance test 5: coremark test
Preface According to the manual description, the coremark score is 403, so we actually test it.process Add code Get the code https://github.com/eembc/coremarkAdd header file include pathPorting interf...
qinyunti Microchip MCU
Help
I would like to ask whether the circuit composed of 555 is astable or monostable? I tried the configuration but it didn't work. I couldn't get 40kHz....
1324564 Integrated technical exchanges

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1673  2292  1834  1196  2007  34  47  37  25  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号