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MTD20P03HDL

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size187KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

MTD20P03HDL Overview

POWER, FET

MTD20P03HDL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeCASE 369C-01
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)200 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)19 A
Maximum drain current (ID)19 A
Maximum drain-source on-resistance0.099 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)74 W
Maximum pulsed drain current (IDM)57 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
MTD20P03HDL
Preferred Device
Power MOSFET
20 Amps, 30 Volts, Logic Level
P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
http://onsemi.com
V
(BR)DSS
30 V
R
DS(on)
TYP
90 mW@5.0 V
I
D
MAX
20 A
(Note 1)
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
P−Channel
D
w
G
S
These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
4
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
1
3
DPAK
CASE 369D
Style 2
2
1 2
MARKING DIAGRAMS
4
Drain
YWW
20P
03HL
2
1
3
Drain
Gate
Source
4
Drain
YWW
20P
03HL
1 2 3
Gate Drain Source
Package
DPAK
DPAK
Straight Lead
DPAK
Shipping
75 Units/Rail
75 Units/Rail
2500 Tape & Reel
Publication Order Number:
MTD20P03HDL/D
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−Source Voltage
Drain−Gate Voltage (R
GS
= 1.0 MΩ)
Gate−Source Voltage
Continuous
Non−Repetitive (t
p
v10
ms)
Drain Current
Continuous
Continuous @ 100°C
Single Pulse (t
p
v10
μs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T
C
= 25°C
(Note 2)
Operating and Storage
Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy
Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 19 Apk, L = 1.1 mH, R
G
= 25
Ω)
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
Value
30
30
"15
"20
19
12
57
75
0.6
1.75
−55
to
150
200
3
DPAK
CASE 369C
Style 2
4
I
DM
P
D
T
J
, T
stg
E
AS
°C
mJ
20P03HL Device Code
Y
= Year
WW
= Work Week
R
θJC
R
θJA
R
θJA
T
L
1.67
100
71.4
260
°C/W
ORDERING INFORMATION
Device
MTD20P03HDL
°C
MTD20P03HDL−1
MTD20P03HDLT4
1. When surface mounted to an FR−4 board using the minimum
recommended pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
March 2006
Rev. 6
1

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Description POWER, FET POWER, FET POWER, FET POWER, FET 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET POWER, FET
Is it Rohs certified? incompatible incompatible conform to conform to incompatible conform to
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
package instruction SMALL OUTLINE, R-PSSO-G2 CASE 369D-01, DPAK-3 LEAD FREE, CASE 369D-01, DPAK-3 LEAD FREE, CASE 369C-01, DPAK-3 CASE 369C-01, DPAK-3 LEAD FREE, CASE 369C-01, DPAK-3
Contacts 3 3 3 3 3 3
Manufacturer packaging code CASE 369C-01 CASE 369D-01 CASE 369D-01 CASE 369C-01 CASE 369C-01 CASE 369C-01
Reach Compliance Code _compli _compli _compli _compli _compli _compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 200 mJ 200 mJ 200 mJ 200 mJ 200 mJ 200 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V 30 V 30 V
Maximum drain current (Abs) (ID) 19 A 19 A 19 A 19 A 19 A 19 A
Maximum drain current (ID) 19 A 19 A 19 A 19 A 19 A 19 A
Maximum drain-source on-resistance 0.099 Ω 0.099 Ω 0.099 Ω 0.099 Ω 0.099 Ω 0.099 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0 e3 e3 e0 e3
Humidity sensitivity level 1 1 1 1 1 1
Number of components 1 1 1 1 1 1
Number of terminals 2 3 3 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 NOT SPECIFIED 260 260 240 260
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 74 W 1.75 W 1.75 W 74 W 74 W 74 W
Maximum pulsed drain current (IDM) 57 A 57 A 57 A 57 A 57 A 57 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin (Sn) Tin (Sn) Tin/Lead (Sn/Pb) Tin (Sn)
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED 40 40 30 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
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