TC1072/TC1073
50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and V
REF
Bypass
Features:
• 50 µA Ground Current for Longer Battery Life
• Very Low Dropout Voltage
• Choice of 50 mA (TC1072) and 100 mA (TC1073)
Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• ERROR Output Can Be Used as a Low Battery
Detector or Processor Reset Generator
• Bypass Input for Ultra Quiet Operation
• Overcurrent and Overtemperature Protection
• Space-Saving 6-Pin SOT-23 Package
• Pin Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
• Other output voltages are available. Please
contact Microchip Technology Inc. for details.
General Description
The TC1072 and TC1073 are high accuracy (typically
±0.5%) CMOS upgrades for older (bipolar) low dropout
regulators. Designed specifically for battery-operated
systems, the devices’ CMOS construction eliminates
wasted ground current, significantly extending battery
life. Total supply current is typically 50 µA at full load
(20 to 60 times lower than in bipolar regulators).
The devices’ key features include ultra low noise
operation (plus optional Bypass input); very low
dropout voltage (typically 85 mV, TC1072 and 180 mV,
TC1073 at full load) and fast response to step changes
in load. An error output (ERROR) is asserted when the
devices are out-of-regulation (due to a low input
voltage or excessive output current). ERROR can be
used as a low battery warning or as a processor
RESET signal (with the addition of an external RC
network). Supply current is reduced to 0.5 µA (max)
and both V
OUT
and ERROR are disabled when the
shutdown input is low. The devices incorporate both
overtemperature and overcurrent protection.
The TC1072 and TC1073 are stable with an output
capacitor of only 1 µF and have a maximum output
current of 50 mA, and 100 mA, respectively. For higher
output current versions, please see the TC1185,
TC1186, TC1187 (I
OUT
= 150 mA) and TC1107,
TC1108 and TC1173 (I
OUT
= 300 mA) data sheets.
Applications:
•
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
Package Type
6-Pin SOT-23
V
OUT
Bypass ERROR
6
5
4
Typical Application Circuit
R
P
V
IN
1
V
IN
V
OUT
6
+
1
µF
V
OUT
TC1072
TC1073
2
GND
Bypass
5
C
BYPASS
470 pF
1
V
IN
2
GND
3
SHDN
3
SHDN
ERROR
4
ERROR
Shutdown Control
(from Power Control Logic)
©
2007 Microchip Technology Inc.
DS21354D-page 1
TC1072/TC1073
1.0
ELECTRICAL
CHARACTERISTICS
†
Note:
Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited
(Note 6)
Maximum Voltage on Any Pin ........V
IN
+0.3V to -0.3V
Operating Temperature Range...... -40°C < T
J
< 125°C
Storage Temperature..........................-65°C to +150°C
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise noted, V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3
μF,
SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
V
IN
I
OUT
MAX
V
OUT
TCV
OUT
ΔV
OUT
/ΔV
IN
ΔV
OUT
/V
OUT
V
IN
-V
OUT
Parameter
Input Operating Voltage
Maximum Output Current
Output Voltage
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
Dropout Voltage
Min
2.7
50
100
V
R
–
2.5%
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
Max
6.0
—
—
Units
V
mA
mA
V
ppm/°C
%
%
mV
Test Conditions
Note 9
TC1072
TC1073
Note 1
Note 2
(V
R
+ 1V)
≤
V
IN
≤
6V
I
L
= 0.1 mA to I
OUT
MAX
(Note 3)
I
L
= 0.1 mA
I
L
= 20 mA
I
L
= 50 mA
I
L
= 100 mA
(Note 4),
TC1073
SHDN = V
IH
, I
L
=
0
(Note 8)
SHDN = 0V
F
RE
≤
1 kHz
V
OUT
= 0V
Notes 5, 6
V
R
±0.5%
V
R
+ 2.5%
20
40
0.05
0.5
2
65
85
180
50
0.05
64
300
0.04
160
10
260
—
—
0.35
2.0
—
—
120
250
80
0.5
—
450
—
—
—
—
I
IN
I
INSD
PSRR
I
OUT
SC
ΔV
OUT
/ΔP
D
T
SD
ΔT
SD
eN
Note
1:
2:
3:
4:
5:
6:
7:
8:
9:
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die Temperature
Thermal Shutdown Hysteresis
Output Noise
µA
µA
dB
mA
V/W
°C
°C
nV/√Hz
I
L
= I
OUT
MAX
470 pF from Bypass to GND
V
R
is the regulator output voltage setting. For example: V
R
= 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
) x 10
6
V
OUT
x
ΔT
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
Hysteresis voltage is referenced by V
R
.
Apply for Junction Temperatures of -40°C to +85°C.
The minimum V
IN
has to justify the conditions = V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1 mA to I
OUT
MAX
.
DS21354D-page 2
©
2007 Microchip Technology Inc.
TC1072/TC1073
TC1072/TC1073 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise noted, V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3
μF,
SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
SHDN Input
V
IH
V
IL
V
IN
MIN
V
OL
V
TH
V
HYS
t
DELAY
Note
1:
2:
3:
4:
5:
6:
7:
8:
9:
Parameter
Min
Typ
Max
Units
Test Conditions
SHDN Input High Threshold
SHDN Input Low Threshold
Minimum V
IN
Operating Voltage
Output Logic Low Voltage
ERROR Threshold Voltage
ERROR Positive Hysteresis
V
OUT
to ERROR Delay
45
—
1.0
—
—
—
—
—
—
—
—
0.95 x V
R
50
2.5
—
15
—
400
—
—
—
%V
IN
%V
IN
V
mV
V
mV
ms
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
ERROR Open Drain Output
1 mA Flows to ERROR
See
Figure 4-2
Note 7
Vout falling from V
R
to
V
R
-10%
V
R
is the regulator output voltage setting. For example: V
R
= 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
) x 10
6
V
OUT
x
ΔT
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
Hysteresis voltage is referenced by V
R
.
Apply for Junction Temperatures of -40°C to +85°C.
The minimum V
IN
has to justify the conditions = V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1 mA to I
OUT
MAX
.
©
2007 Microchip Technology Inc.
DS21354D-page 3
TC1072/TC1073
2.0
Note:
TYPICAL CHARACTERISTICS CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise specified, all parts are measured at temperature = +25°C.
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 50mA
0.020
0.018
0.100
I
LOAD
= 10mA
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0
20
50
TEMPERATURE (°C)
70
125
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
-40
-20
C
IN
= 1μF
C
OUT
= 1μF
C
IN
= 1μF
C
OUT
= 1μF
0.000
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
0.200
0.180
DROPOUT VOLTAGE (V)
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 100mA
DROPOUT VOLTAGE (V)
0.300
0.250
0.200
0.150
0.100
0.050
0.000
-40
-20
0
20
50
70
125
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 150mA
C
IN
= 1μF
C
OUT
= 1μF
C
IN
= 1μF
C
OUT
= 1μF
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
TEMPERATURE (°C)
90
80
Ground Current vs. V
IN
(V
OUT
= 3.3V)
I
LOAD
= 10mA
90
80
Ground Current vs. V
IN
(V
OUT
= 3.3V)
I
LOAD
= 100mA
GND CURRENT (
μ
A)
60
50
40
30
20
10
0
GND CURRENT (
μ
A)
C
IN
= 1μF
C
OUT
= 1μF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
70
70
60
50
40
30
20
10
0
C
IN
= 1μF
C
OUT
= 1μF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
DS21354D-page 4
©
2007 Microchip Technology Inc.
TC1072/TC1073
Note:
Unless otherwise specified, all parts are measured at temperature = +25°C.
80
70
GND CURRENT (μA)
Ground Current vs. V
IN
(V
OUT
= 3.3V)
I
LOAD
= 150mA
3.5
V
OUT
vs.
V
IN
(V
OUT
= 3.3V)
I
LOAD
= 0
3
2.5
60
V
OUT
(V)
C
IN
= 1μF
C
OUT
= 1μF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
50
40
30
20
10
0
2
1.5
1
0.5
0
0
0.5 1 1.5
2 2.5 3 3.5
4 4.5 5
5.5 6 6.5 7
C
IN
= 1μF
C
OUT
= 1μF
V
IN
(V)
3.5
3.0
2.5
V
OUT
(V)
V
OUT
vs.
V
IN
(V
OUT
= 3.3V)
3.320
Output Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 10mA
I
LOAD
= 100mA
3.315
3.310
3.305
2.0
1.5
1.0
0.5
0.0
0
V
OUT
(V)
3.300
3.295
3.290
3.285
C
IN
= 1μF
C
OUT
= 1μF
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
3.280
3.275
-40
C
IN
= 1μF
C
OUT
= 1μF
V
IN
= 4.3V
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
3.290
3.288
3.286
Output Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 150mA
V
OUT
(V)
3.284
3.282
3.280
3.278
3.276
3.274
-40
-20
-10
0
20
40
85
125
C
IN
= 1μF
C
OUT
= 1μF
V
IN
= 4.3V
TEMPERATURE (°C)
©
2007 Microchip Technology Inc.
DS21354D-page 5
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