Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT6800/59
2 AMP
500 VOLTS
NPN TRANSISTOR
TO-59
DESIGNER’S DATA SHEET
FEATURES:
•
•
•
•
•
•
BV
CEO
TO 400 V
Fast Switching
Very Low Leakage
Low Saturation Voltage
200
o
C Operating, Gold Eutectic Die Attach
Designed for Complementary Use with SFT1192
MAXIMUM RATINGS
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 100
o
C
Derate above 25
o
C
Operating and Storage Temperature Range
Thermal Resistance, Junction to Case
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
T
OP
& T
STG
R
θJC
Value
400
500
10
2
0.5
20
133
-65 to +200
7.5
Units
Volts
Volts
Volts
Amps
Amps
W
mW/ºC
ºC
ºC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0009E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT6800/59
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
CEV
I
EBO
(I
C
= 50 mA
DC
)
(I
C
= 500 mA
DC
)
(I
C
= 1.0 A
DC
)
H
FE
V
CE (SAT)
V
BE (SAT)
f
T
C
obo
t
(on)
t
(off)
ELECTRICAL CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(I
C
= 20 mA)
Collector – Base Breakdown Voltage
(I
C
= 100
µA
DC
)
Emitter – Base Breakdown Voltage
(I
E
= 20
µA
DC
)
Collector Cutoff Current
(V
CB
= 400 V
DC
)
Collector Cutoff Current
(V
CE
= 400 V
DC
, V
EB
= 1.5 V
DC
)
Emitter Cutoff Current
(V
EB
= 6 V
DC
)
DC Current Gain*
(V
CE
= 5 V
DC
)
Collector – Emitter Saturation Voltage*
(I
C
= 500 mA
DC
, I
B
= 50 mA
DC
)
Base – Emitter Saturation Voltage*
(I
C
= 500 mA
DC
, I
B
= 50 mA
DC
)
Current Gain Bandwidth Product
(I
C
= 50 mA
DC
, V
CE
= 10 V
DC
, f = 20 MHz)
Output Capacitance
(V
CB
= 30 V
DC
, I
E
= 0 A
DC
, f = 2.0 MHz)
Turn On Time
Turn Off Time
(V
CC
= 330 V
DC
, I
C
= 500 mA
DC
,
I
B1
= I
B2
= 100 mA
DC
R
B1
= R
B2
= 330
Ω
Min
400
500
10
––
––
––
Max
––
––
––
––
Units
V
V
V
nA
nA
nA
200
200
200
––
––
––
50
40
15
––
––
500
1.0
––
mV
DC
V
DC
MHz
pf
ns
ns
25
––
––
––
40
700
2000
* Pulse Test: Pulse Width = 300
µsec,
Duty Cycle = 2%
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0009E
DOC
51mcu
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