NSM3005NZ
Small Signal BJT and
MOSFET
30 V, 500 mA, PNP BJT with 20 V, 224 mA,
N−Channel MOSFET
Features
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•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
6
1
UDFN6
CASE 517AT
mCOOLt
Unit
V
V
V
mA
mA
XX = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
•
Portable Devices
Q1 MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
Value
30
40
5.0
500
50
MARKING DIAGRAM
1
XX MG
G
Q2 MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Pulsed Drain Current
Source Current (Body Diode)
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
p
= 10
ms
I
DM
I
S
Symbol
V
DSS
V
GS
I
D
Value
20
±8
224
162
241
673
120
mA
mA
Unit
V
V
mA
PIN CONNECTIONS
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Symbol
R
qJA
P
D
T
J
, T
STG
T
L
Value
245
0.8
−55 to
150
260
Unit
°C/W
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
Device
NSS3005NZTAG
Package
UDFN6
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
January, 2016 − Rev. 1
Publication Order Number:
NSM3005NZ/D
NSM3005NZ
Q1 ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
(Note 2)
DC Current Gain
h
FE
V
CE
= 3.0 V, I
C
= 30 mA
V
CE
= 3.0 V, I
C
= 100 mA
V
CE
= 3.0 V, I
C
= 500 mA
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter Turn–On Voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 1.0 V, I
C
= 500 mA
20
20
20
−
−
−
−
−
−
−
−
−
100
100
100
0.4
1.1
1.0
V
V
V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
C
= 100
mA
I
C
= 10 mA
I
E
= 100
mA
V
CB
= 25 V, I
E
= 0 A
V
EB
= 5.0 V, I
C
= 0 A
40
30
5.0
−
−
−
−
−
−
−
−
−
−
1.0
10
V
V
V
mA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Q2 ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Votlage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(ON)
V
GS
= V
DS
, I
D
= 250
mA
−
V
GS
= 4.5 V, I
D
= 100 mA
V
GS
= 2.5 V, I
D
= 50 mA
V
GS
= 1.8 V, I
D
= 20 mA
V
GS
= 1.5 V, I
D
= 10 mA
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(ON)
t
r
T
d(ON)
t
f
V
SD
V
GS
= 0 V, I
S
= 10 mA
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 200 mA, R
G
= 2
W
V
GS
= 4.5 V, V
DS
= 15 V;
I
D
= 200 mA
f = 1.0 MHz, V
GS
= 0 V,
V
DS
= 15 V
−
−
−
−
−
−
−
15.8
3.5
2.4
0.70
0.05
0.14
0.10
−
−
−
−
−
−
−
nC
pF
g
FS
V
DS
= 5.0 V, I
D
= 100 mA
−
0.4
−
−
−
−
−
1.9
0.65
0.9
1.1
1.4
0.56
1.0
−
1.4
1.9
2.2
4.3
−
S
V
mV/°C
W
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 250
mA
I
D
= −250
µA,
ref to 25°C
V
GS
= 0 V, V
DS
= 16 V, T
J
= 25°C
V
DS
= 0 V, V
GS
=
±8.0
V
20
−
−
−
−
19
−
−
−
−
1.0
±2.0
V
mV/°C
mA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
−
0.55
1.0
V
2. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
−
−
−
−
18
35
201
110
−
−
−
−
ns
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NSM3005NZ
TYPICAL CHARACTERISTICS − Q1
1000
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
T
J
= 150°C
10
T
J
= 25°C
T
J
= −55°C
0.1
T
J
= 150°C
T
J
= 25°C
T
J
= −55°C
1
10
100
1000
1
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
0.01
I
C
, COLLECTOR CURRENT (mA)
Figure 1. PNP DC Current Gain vs. Collector
Current
1.1
V
CE(sat)
, BASE−EMITTER SATURA-
TION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
T
J
= 150°C
T
J
= 25°C
T
J
= −55°C
I
C
/I
B
= 10
V
BE(on)
, BASE−EMITTER (V)
1.0
0.9
0.8
0.7
0.6
0.5
T
J
= 150°C
0.4
0.3
0.2
1
T
J
= 25°C
T
J
= −55°C
Figure 2. PNP VCE vs. IC
V
CE
= 1 V
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Figure 3. PNP VBE(sat) vs. IC
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1.0
0.9
C, CAPACITANCE (pF)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
500 mA
I
C
= 1.0 mA
0.01
0.1
10 mA
100 mA
300 mA
1
10
100
1
0.1
C
ibo
1000
Figure 4. PNP VBE(on) vs. IC
100
C
obo
10
1
10
100
I
B
, BASE CURRENT (mA)
V
R
, REVERSE VOLTAGE (V)
Figure 5. PNP VCE vs. IB
Figure 6. PNP Capacitance
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NSM3005NZ
TYPICAL CHARACTERISTICS − Q2
1.0
0.9
I
D
, DRAIN CURRENT (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1.2 V
1.5 V
1.0
0.9
I
D
, DRAIN CURRENT (A)
2.0 V
1.8 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
= 5 V
3.0 V
3.5 V
4.0 V
4.5 V
V
GS
= 2.5 V
T
J
= −55°C
T
J
= 25°C
T
J
= 125°C
Figure 7. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
, GATE VOLTAGE (V)
T
J
= 25°C
I
D
= 0.1 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
Figure 8. Transfer Characteristics
T
J
= 25°C
V
GS
= 1.5 V
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
I
D
, DRAIN CURRENT (A)
Figure 9. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, NORMALIZED DRAIN−TO−SOURCE
RESISTANCE
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
1
−25
0
25
50
75
100
125
150
2
V
GS
= 1.8 V
I
D
= 20 mA
V
GS
= 4.5 V
I
D
= 100 mA
I
DSS
, LEAKAGE (nA)
100
1000
Figure 10. On−Resistance vs. Drain Current
and Gate Voltage
T
J
= 125°C
T
J
= 85°C
10
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. On−Resistance Variation with
Temperature
Figure 12. Drain−to−Source Leakage Current
vs. Voltage
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NSM3005NZ
TYPICAL CHARACTERISTICS − Q2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
30
25
C, CAPACITANCE (pF)
20
15
10
5
C
rss
0
0
2
4
6
8
10
12
14
16
18
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
5
Q
T
18
15
4
V
DS
3
V
GS
12
9
2
Q
GS
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Q
G
, TOTAL GATE CHARGE (nC)
Q
GD
V
DS
= 15 V
T
J
= 25°C
I
D
= 0.2 A
6
3
0
Figure 13. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
GS
= 4.5 V
V
DD
= 15 V
t
d(off)
t, TIME (ns)
t
f
100
t
r
t
d(on)
10
1
10
R
G
, GATE RESISTANCE (W)
100
10
Figure 14. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
T
J
= 25°C
1
T
J
= 125°C
T
J
= −55°C
0.1
0.01
0.4 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 15. Resistive Switching Time Variation
vs. Gate Resistance
V
GS(th)
, GATE−TO−SOURCE THRESHOLD
VOLTAGE (V)
0.85
Figure 16. Diode Forward Voltage vs. Current
0.75
I
D
= 250
mA
0.65
0.55
0.45
0.35
−50
−25
0
25
50
75
100
125
150
T
J
, TEMPERATURE (°C)
Figure 17. Threshold Voltage
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