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NSR01L30MUT5G

Description
Schottky Barrier Diode
File Size103KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet View All

NSR01L30MUT5G Overview

Schottky Barrier Diode

NSR01L30MUT5G
Product Preview
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current.
Features
http://onsemi.com
Very Low Forward Voltage Drop
350 mV @ 1 mA
Low Reverse Current
0.2
mA
@ 10 V
100 mA of Continuous Forward Current
ESD Rating
Human Body Model: Class 3B
ESD Rating
Machine Model: Class C
This is a Halide−Free Device
This is a Pb−Free Device
Typical Applications
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
Rating
Symbol
V
R
I
F
(60 Hz @ 1 cycle)
I
FSM
ESD
Value
30
100
2.0
>8.0
>400
Unit
V
mA
A
kV
V
MARKING
DIAGRAM
X3DFN2
CASE 152AF
PIN 1
EM
Markets
E
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
15000 /
Tape & Reel
MAXIMUM RATINGS
Reverse Voltage
Forward Current (DC)
Forward Surge Current
ESD Rating:
NSR01L30MUT5G X3DFN2
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Human Body Model
Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2012
January, 2012
Rev. P0
1
Publication Order Number:
NSR01L30MU/D

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