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IRFB9N65

Description
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)
File Size104KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRFB9N65 Overview

Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

PD - 91815C
SMPS MOSFET
IRFB9N65A
HEXFET
®
Power MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
650V
R
DS(on)
max
0.93Ω
I
D
8.5A
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
ˆ
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
ƒˆ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
8.5
5.4
21
167
1.3
± 30
2.8
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l
l
Single Transistor Flyback
Single Transistor Forward
Notes

through
…
are on page 8
www.irf.com
1
6/21/00

IRFB9N65 Related Products

IRFB9N65 IRFB9N65A
Description Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)
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