NVMFS5C468NL datasheet, PDF - EEWORLD Datasheet

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NVMFS5C468NL: DescriptionSingle NâChannel Power MOSFET; File Size81KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NVMFS5C468NL Overview

Single NâChannel Power MOSFET

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NVMFS5C468NL

Power MOSFET

40 V, 10.3 mW, 37 A, Single N−Channel

Features

•

Small Footprint (5x6 mm) for Compact Design

Low R

DS(on)

to Minimize Conduction Losses

Low Q

and Capacitance to Minimize Driver Losses

NVMFS5C468NLWF − Wettable Flank Option for Enhanced Optical

Inspection

•

AEC−Q101 Qualified and PPAP Capable

•

These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

qJC

(Notes 1, 3)

Power Dissipation

qJC

(Note 1)

Continuous Drain

Current R

qJA

(Notes 1, 2, 3)

Power Dissipation

qJA

(Notes 1 & 2)

Pulsed Drain Current

= 25°C

Steady

State

= 100°C

= 25°C

= 100°C

= 25°C

Steady

State

= 100°C

= 25°C

= 100°C

= 25°C, t

= 10

, T

stg

Symbol

DSS

Value

±20

9.2

3.5

1.7

190

−55 to

+ 175

260

°C

Unit

www.onsemi.com

(BR)DSS

40 V

DS(ON)

MAX

10.3 mW @ 10 V

MAX

37 A

17.6 mW @ 4.5 V

D (5,6)

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING

DIAGRAM

Operating Junction and Storage Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (I

L(pk)

= 2 A)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

Symbol

qJC

qJA

Value

5.3

Unit

°C/W

XXXXXX = 5C468L

XXXXXX =

(NVMFS5C468NL) or

XXXXXX =

468LWF

XXXXXX =

(NVMFS5C468NLWF)

= Assembly Location

= Year

= Work Week

= Lot Traceability

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Semiconductor Components Industries, LLC, 2016

August, 2017 − Rev. 4

Publication Order Number:

NVMFS5C468NL/D

NVMFS5C468NL Related Products

	NVMFS5C468NL	NVMFS5C468NLT1G	NVMFS5C468NLT3G	NVMFS5C468NLWFT1G	NVMFS5C468NLWFT3G	NVMFS5C468NLAFT3G	NVMFS5C468NLWFAFT3G	NVMFS5C468NLWFAFT1G	NVMFS5C468NLAFT1G
Description	Single NâChannel Power MOSFET	Single NâChannel Power MOSFET	Single NâChannel Power MOSFET	Single NâChannel Power MOSFET	Single NâChannel Power MOSFET	MOSFET N-CH 40V 37A SO8FL	MOSFET N-CH 40V 37A SO8FL	MOSFET N-CH 40V DFN5 WETTABLE	MOSFET N-CH 40V 13A 37A 5DFN
Brand Name	-	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	-	-	ON Semiconductor	ON Semiconductor
Is it lead-free?	-	Lead free	Lead free	Lead free	Lead free	-	-	Lead free	Lead free
Maker	-	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	-	-	ON Semiconductor	ON Semiconductor
package instruction	-	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	-	-	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5
Manufacturer packaging code	-	488AA	488AA	488AA	488AA	-	-	488AA	488AA
Reach Compliance Code	-	not_compliant	not_compliant	not_compliant	not_compliant	-	-	not_compliant	not_compliant
Factory Lead Time	-	29 weeks	29 weeks	29 weeks	29 weeks	-	-	6 weeks	5 weeks
Avalanche Energy Efficiency Rating (Eas)	-	95 mJ	95 mJ	95 mJ	95 mJ	-	-	95 mJ	95 mJ
Shell connection	-	DRAIN	DRAIN	DRAIN	DRAIN	-	-	DRAIN	DRAIN
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	40 V	40 V	40 V	40 V	-	-	40 V	40 V
Maximum drain current (Abs) (ID)	-	37 A	37 A	37 A	37 A	-	-	37 A	37 A
Maximum drain current (ID)	-	37 A	37 A	37 A	37 A	-	-	37 A	37 A
Maximum drain-source on-resistance	-	0.0176 Ω	0.0176 Ω	0.0176 Ω	0.0176 Ω	-	-	0.0176 Ω	0.0176 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	-	11 pF	11 pF	11 pF	11 pF	-	-	11 pF	11 pF
JESD-30 code	-	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5	-	-	R-PDSO-F5	R-PDSO-F5
JESD-609 code	-	e3	e3	e3	e3	-	-	e3	e3
Humidity sensitivity level	-	1	1	1	1	-	-	1	1
Number of components	-	1	1	1	1	-	-	1	1
Number of terminals	-	5	5	5	5	-	-	5	5
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	175 °C	175 °C	175 °C	175 °C	-	-	175 °C	175 °C
Minimum operating temperature	-	-55 °C	-55 °C	-55 °C	-55 °C	-	-	-55 °C	-55 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	-	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	-	28 W	28 W	28 W	28 W	-	-	28 W	28 W
Maximum pulsed drain current (IDM)	-	190 A	190 A	190 A	190 A	-	-	190 A	190 A
Guideline	-	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101	-	-	AEC-Q101	AEC-Q101
surface mount	-	YES	YES	YES	YES	-	-	YES	YES
Terminal surface	-	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)	-	-	Tin (Sn)	Tin (Sn)
Terminal form	-	FLAT	FLAT	FLAT	FLAT	-	-	FLAT	FLAT
Terminal location	-	DUAL	DUAL	DUAL	DUAL	-	-	DUAL	DUAL
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON	-	-	SILICON	SILICON

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