Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.0
1.85
300
MAX.
1500
800
8
15
32
3.0
-
2.2
400
UNIT
V
V
A
A
W
V
A
V
ns
T
hs
≤
25 ˚C
I
C
= 5.0 A; I
B
= 1.25 A
f= 16 kHz
I
F
= 5 A
I
Csat
= 5 A; f = 16kHz
PINNING - SOT186A
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
8
15
4
6
5
32
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
4.0
-
UNIT
K/W
K/W
1
Turn-off current.
February 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DZ
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
BV
EBO
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
PARAMETER
Collector cut-off current
2
CONDITIONS
MIN.
-
-
7.5
-
800
-
0.85
-
4.2
-
TYP.
-
-
13.5
25
-
-
0.94
7
5.7
1.85
MAX.
1.0
2.0
-
-
-
3.0
1.03
-
7.3
2.2
UNIT
mA
mA
V
Ω
V
V
V
V
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
Emitter-base breakdown voltage
I
B
= 600 mA
Base-emitter resistance
V
EB
= 6 V
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
Collector-emitter saturation voltages I
C
= 5.0 A; I
B
= 1.25 A
Base-emitter saturation voltage
I
C
= 5.0 A; I
B
= 1.25 A
DC current gain
I
C
= 500 mA; V
CE
= 5 V
I
C
= 5.0 A; V
CE
= 5 V
Diode forward voltage
I
F
= 5 A
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
I
F
= 4 A; dI
F
/dt = 50 A/µs
V
F
= 5 V
CONDITIONS
I
Csat
= 5.0 A; I
B1
= 1.0 A;(I
B2
= -2.5 A)
2.75
300
19
500
3.75
400
-
-
µs
ns
V
ns
TYP.
MAX.
UNIT
t
s
t
f
V
fr
t
fr
2
Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DZ
TRANSISTOR
IC
DIODE
ICsat
+ 150 v nominal
adjust for ICsat
t
Lc
IB
IB1
t
20us
26us
64us
VCE
IB2
D.U.T.
IBend
LB
Cfb
Rbe
-VBB
t
Fig.1. Switching times waveforms (16 kHz).
Fig.4. Switching times test circuit.
ICsat
90 %
IC
100
hFE
VCE = 1V
BU4508DF/X/Z
Ths = 25 C
Ths = 85 C
10 %
tf
ts
IB
IB1
t
10
t
1
0.01
- IB2
0.1
1
IC / A
10
Fig.2. Switching times definitions.
Fig.5. High and low DC current gain.
I
F
I
F
100
hFE
VCE = 5V
BU4508DF/X/Z
Ths = 25 C
Ths = 85 C
10%
t fr
V
F
time
10
5V
V
F
time
V
fr
1
0.01
0.1
1
IC / A
10
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
.
Fig.6. High and low DC current gain.
February 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DZ
10
VCESAT \ V
BU4508DF/X/Z
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
with heatsink compound
Ths = 25 C
Ths = 85 C
1
0.1
0.01
0.1
1
10
IC / A
100
0
20
40
60
80
Ths / C
100
120
140
Fig.7. Typical collector-emitter saturation voltage.
Fig.10. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
Zth K/W
VBESAT / V
1.2
BU4508DF/X/Z
Ths = 25 C
Ths = 85 C
10
BU4508AZ
1.1
1
0.5
0.2
0.1
0.05
1
0.1
0.9
IC = 5 A
0.02
0.8
0.01
P
D
0
t
p
D=
t
p
T
t
1.0E+01
0.7
T
0.6
0
1
2
3
IB / A
4
0.001
1.0E-07
1.0E-05
1.0E-03
1.0E-01
t/s
Fig.8. Typical base-emitter saturation voltage.
Fig.11. Transient thermal impedance.
10
ts/tf/ us
BU4508D ts/tf
ICsat = 5 A
Ths = 85 C
Freq = 16 kHz
8
6
4
2
0
0
0.5
1
1.5
2
2.5
IB / A
3
Fig.9. Typical collector storage and fall time.
I
C
=5 A; T
j
= 85˚C; f = 16kHz
February 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DZ
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1999
5
Rev 1.000
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