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SF65

Description
6 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size153KB,2 Pages
ManufacturerJGD(Jinan Gude Electronic Device)
Websitehttp://www.jgd.com.cn/
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SF65 Overview

6 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD

SF65 Parametric

Parameter NameAttribute value
MakerJGD(Jinan Gude Electronic Device)
package instructionO-PALF-W2
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
applicationSUPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage300 V
Maximum reverse current5 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

SF65 Related Products

SF65 SF66 SF64 SF63 SF62 SF61
Description 6 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 6 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,200V V(RRM),AXIAL-9.1 6 A, SILICON, RECTIFIER DIODE, DO-201AD 6 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
Maker JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device)
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknow unknown unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V 0.95 V 0.95 V 0.95 V 0.95 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 6 A 6 A 6 A 6 A 6 A 6 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 300 V 400 V 200 V 150 V 100 V 50 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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