70-W212NMA400SC03-M209P03
datasheet
flow
MNPC 4w
Features
● Mixed voltage NPC
● Low inductive
● High power screw interface
● Integrated DC-snubber capacitors
1200 V / 400 A
flow
SCREW 4w housing
Target Applications
● Solar inverter
● UPS
● High speed motor drive
Schematic
Types
● 70-W212NMA400SC03-M209P03
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
half bridge IGBT ( T1 , T4 )
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
I
cmax
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE max
= 1200V
T
vj max
= 150°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
338
439
1200
731
1107
±20
10
800
800
175
V
A
A
W
V
µs
V
A
°C
neutral point FWD ( D2 , D3 )
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
I2t-value
Repetitive peak forward current
Power dissipation per FWD
Maximum Junction Temperature
V
RRM
I
F
I
FSM
t
p
= 10 ms, sine halfwave
I t
I
FRM
P
tot
T
j
max
t
P
= 1 ms
T
j
=T
j
max
T
vj
< 150°C
T
h
=80°C
T
c
=80°C
2
T
j
=25°C
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
600
309
415
890
T
vj
< 150°C
3960
800
306
464
175
V
A
A
A
2
s
A
W
°C
copyright Vincotech
1
04 Jun. 2015 / Revision 5
70-W212NMA400SC03-M209P03
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
neutral point IGBT ( T2 , T3 )
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
V
CE
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
I
cmax
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE max
= 1200V
T
vj max
= 150°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
329
430
1200
559
847
±20
6
360
800
175
V
A
A
W
V
µs
V
A
°C
half bridge FWD ( D1 , D4 )
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
I2t-value
Repetitive peak forward current
Power dissipation per FWD
Maximum Junction Temperature
V
RRM
I
F
I
FSM
t
p
=10ms , sin 180°
2
I t
T
j
=25°C
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
1200
270
356
2200
T
j
=150°C
6052
V
A
A
A
2
s
A
W
°C
I
FRM
P
tot
T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
1200
528
800
175
copyright Vincotech
2
04 Jun. 2015 / Revision 5
70-W212NMA400SC03-M209P03
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
DC link Capacitor
Max.DC voltage
Operation Temperature
RMS Current
V
MAX
T
OP
I
RMS
630
-40...+105
10
V
°C
A
General Module Properties
Material of module baseplate
Material of internal isulation
Cu
Al
2
O
3
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright Vincotech
3
04 Jun. 2015 / Revision 5
70-W212NMA400SC03-M209P03
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or I
C
[A] or
V
GE
[V] or
V
CE
[V] or I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
half bridge IGBT ( T1 , T4 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
th(j-s)
R
th(j-c)
Phase-Change
Material
ʎ=3,4W/mK
±15
600
400
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=1
Rgon=1
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
1200
0
0,0008
50
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1,5
5,8
1,97
2,23
6,5
2,4
0,6
3000
1,88
235
247
46
55
292
354
55
92
7,95
12,30
13,25
22,08
24600
1620
1380
3600
0,13
K/W
0,09
nC
pF
V
V
mA
nA
ns
mWs
neutral point FWD ( D2 , D3 )
FWD forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
RRM
t
rr
Q
rr
Rgon=1
50
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,2
1,67
1,56
204
262
183
295
17
33
3129
1705
3,78
7,44
0,31
K/W
0,20
2,2
V
A
ns
µC
A/µs
mWs
di(rec)max
/dt
Erec
R
th(j-s)
R
th(j-c)
Phase-Change
Material
ʎ=3,4W/mK
neutral point IGBT ( T2 , T3 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
th(j-s)
R
th(j-c)
Phase-Change
Material
ʎ=3,4W/mK
±15
300
400
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=1
Rgon=1
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
600
0
0,00043
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,8
1,56
1,80
6,5
2,2
0,1
3000
0,5
201
204
29
32
248
272
71
88
3,93
5,61
10,49
14,07
24640
1536
732
4266
0,17
K/W
0,11
nC
pF
V
V
mA
nA
ns
mWs
copyright Vincotech
4
04 Jun. 2015 / Revision 5
70-W212NMA400SC03-M209P03
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or I
C
[A] or
V
GE
[V] or
V
CE
[V] or I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
half bridge FWD ( D1 , D4 )
FWD forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
r
I
RRM
t
rr
Q
rr
Rgon=1
15
300
20
600
20
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
2,29
2,37
410
521
63
149
24
49
18915
15110
5,79
12,71
0,18
K/W
0,12
3
480
V
µA
A
ns
µC
A/µs
mWs
di(rec)max
/dt
E
rec
R
th(j-s)
R
th(j-c)
Phase-Change
Material
ʎ=3,4W/mK
DC link Capacitor
C value
Stray inductance of on board capacitors
Series resistance of on board capacitors
C
ESL
ESR
2 * 0,68
26/2
14/2
µF
nH
mΩ
Thermistor
Rated resistance
Deviation of R
100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
Tol. ±3%
B
(25/100)
Tol. ±3%
R
∆R/R
P
R100=1486
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
-12
200
2
3950
3996
B
22000
+14
%
mW
mW/K
K
K
Module Properties
Module inductance (from chips to PCB)
Module inductance (from PCB to PCB using Intercon board)
Resistance of Intercon boards (from PCB to PCB using Intercon board)
Mounting torque
Mounting torque
Terminal connection torque
Weight
L
sCE
L
sCE
Rcc
'1+EE'
M
M
M
G
Tc=25°C, per switch
Screw M4 - mounting according to valid application note
FSWB1-4TY-M-*-HI
Screw M5 - mounting according to valid application note
FSWB1-4TY-M-*-HI
Screw M6 - mounting according to valid application note
FSWB1-4TY-M-*-HI
2
4
2,5
5
3
1,5
2,2
6
5
710
nH
nH
mΩ
Nm
Nm
Nm
g
copyright Vincotech
5
04 Jun. 2015 / Revision 5
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