V23990-K229-A40-PM
MiniSKiiP® 2 PIM
Features
●
Solderless interconnection
●
Trench Fieldstop IGBT4 technology
1200V / 25A
MiniSKiiP® 2 housing
Target Applications
●
Industrial Motor Drives
Schematic
Types
●
V23990-K229-A40-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
Surge forward current
I t-value
Power dissipation per Diode
Maximum Junction Temperature
2
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°
C
Tc=80°
C
2
1600
T
j
=T
j
max
T
h
=80°
C
Tc=80°
C
40
40
270
T
j
=150°
C
360
56
85
150
V
A
A
A
2
s
W
°
C
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
C
Tc=80°
T
h
=80°
C
Tc=80°
C
1200
33
40
75
89
135
±20
10
800
175
V
A
A
W
V
µs
V
°
C
copyright Vincotech
1
Revision: 4.1
V23990-K229-A40-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
=10ms half sine
T
j
=T
j
max
T
h
=80°
C
Tc=80°
C
T
h
=80°
C
Tc=80°
C
1200
25
32
160
62
95
175
V
A
A
W
°
C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12.7
min 12.7
V
mm
mm
copyright Vincotech
2
Revision: 4.1
V23990-K229-A40-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
D8,D9,D10,D11,D12,D13
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50µm
λ=1W/mK
1500
25
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
0,8
1,08
1,03
0,9
0,78
18
21
1,35
V
V
m
0,01
1,1
1,25
mA
Thermal resistance chip to heatsink per chip
R
thJH
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Vcc=960V
Thermal grease
thickness≤50µm
λ=1W/mK
15
40
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=32
Rgon=32
V
CE
=V
GE
15
0
20
1200
0
0,00085
25
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
5
1,35
5,8
1,88
2,2
6,5
2,15
0,05
300
V
V
mA
nA
-
±15
600
25
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
112
113
29,3
34,7
231
303
91
137
1,87
2,77
1,49
2,43
1430
115
85
120
ns
mWs
pF
nC
Thermal resistance chip to heatsink per chip
R
thJH
1,2
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
Rgon=32
±15
600
25
25
di(rec)max
/dt
Erec
Thermal grease
thickness≤50µm
λ=1W/mK
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
1,5
2,47
2,49
13,5
18,3
319
544
1,48
3,69
174
64
0,52
1,44
1,52
2,75
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
K/W
Thermistor
Rated resistance
Deviation of R100
R100
Power dissipation constant
A-value
B-value
Vincotech NTC Reference
B(25/50) Tol. %
B(25/100) Tol. %
R
∆R/R
P
R100=1670
T=25°
C
T=100°
C
T=100°
C
T=25°
C
T=25°
C
T=25°
C
7,635*10-3
1,731*10-5
E
-3
1670,313
mW/K
1/K
1/K²
1000
3
%
copyright Vincotech
3
Revision: 4.1
V23990-K229-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
75
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
75
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
60
60
45
45
30
30
15
15
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
25
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
75
I
F
(A)
D1,D2,D3,D4,D5,D6,D7 FWD
T
j
= 25°
C
20
60
15
45
T
j
= T
jmax
-25°
C
T
j
= T
jmax
-25°
C
10
30
T
j
= 25°
C
5
15
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
1
2
3
4
V
F
(V)
5
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright Vincotech
4
Revision: 4.1
V23990-K229-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
8
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
8
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
E
on High T
E
on High T
6
6
E
on Low T
E
on Low T
4
4
E
off High T
E
off High T
2
E
off Low T
2
E
off Low T
0
0
10
20
30
40
I
C
(A)
50
0
0
30
60
90
120
R
G
(
Ω
)
150
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
32
R
goff
=
32
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
25
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
2
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
2
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
T
j
= T
jmax
-25°
C
E
rec
1,6
1,6
T
j
= T
jmax
-25°
C
1,2
1,2
E
rec
0,8
0,8
T
j
= 25°
C
E
rec
T
j
= 25°
C
E
rec
0,4
0,4
0
0
10
20
30
40
I
C
(A)
50
0
0
30
60
90
120
R
G
(
Ω
)
150
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
32
With an inductive load at
T
j
=
25/150
°C
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
25
A
copyright Vincotech
5
Revision: 4.1
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