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SEMB10

Description
PNP Silicon Digital Transistor Array Preliminary data
CategoryDiscrete semiconductor    The transistor   
File Size141KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

SEMB10 Overview

PNP Silicon Digital Transistor Array Preliminary data

SEMB10 Parametric

Parameter NameAttribute value
MakerInfineon
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Manufacturer packaging codeSOT666
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 21.36
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
SEMB10
PNP Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistors (R1=2,2kΩ,
R
2 =47kΩ)
C1
6
B2
5
E2
4
4
5
3
6
1
2
R
2
R
1
TR1
R
2
1
E1
2
B1
3
C2
EHA07173
TR2
R
1
Type
SEMB10
Maximum Ratings
Parameter
Marking
W5
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Value
50
50
5
10
100
250
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation,
T
S
= 75 °C
Junction temperature
Storage temperature
Thermal Resistance
mA
mW
°C
Junction - soldering point
1)
R
thJS
300
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Mar-01-2004
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