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1F3

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size229KB,2 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
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1F3 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

1F1 THRU 1F7
FAST RECOVERY RECTIFIERS
Reverse Voltage -
50 to 1000 Volts
R-1
Forward Current -
1.0 Ampere
FEATURES
1.0 (25.4)
MIN.
0.102 (2.6)
0.091 (2.3)
DIA.
0.140(3.50)
0.114(2.90)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.025 (0.65)
0.021 (0.55)
DIA.
Dimensions in inches and (millimeters)
Case:
R-1 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.007
ounce, 0.20 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
1F1
1F2
1F3
1F4
1F5
1F6
1F7
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=25 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
150
25.0
1.3
5.0
50.0
250
15.0
50.0
-65 to +150
500
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com.cn

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1F3 1F1 1F2 1F4 1F5 1F6 1F7
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