DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAP1321-04
Silicon PIN diode
Product specification
2001 Apr 17
Philips Semiconductors
Product specification
Silicon PIN diode
FEATURES
•
High voltage, current controlled
•
RF resistor for RF attenuators and switches
•
Low diode capacitance
•
Low diode forward resistance
•
Very low series inductance
•
For applications up to 3 GHz.
k, 4 columns
BAP1321-04
PINNING
PIN
1
2
3
DESCRIPTION
anode
cathode
common connection
2
1
APPLICATIONS
•
RF attenuators and switches.
DESCRIPTION
Two planar PIN diodes in series configuration in a SOT23
small SMD plastic package.
3
Top view
MAM107
2
3
1
Marking code:
6Fp.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
≤
90
°C
−
−
−
−65
−65
60
100
250
+150
+150
V
mA
mW
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 Apr 17
2
Philips Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
I
R
C
d
forward voltage
reverse leakage current
diode capacitance
I
F
= 50 mA
V
R
= 60 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
f = 100 MHz; note 1
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
|s
21
|
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
τ
L
L
S
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
charge carrier life time
series inductance
when switched from I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
PARAMETER
CONDITIONS
BAP1321-04
TYP.
MAX.
UNIT
0.95
−
0.42
0.375
0.275
3.4
2.4
1.2
0.85
15.7
10.5
7.9
0.27
0.35
0.43
0.21
0.29
0.37
0.14
0.21
0.29
0.10
0.18
0.26
0.5
1.4
1.1
100
−
0.45
0.325
5.0
3.6
1.8
1.3
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
nA
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
nH
VALUE
220
UNIT
K/W
2001 Apr 17
3
Philips Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP1321-04
handbook, halfpage
10
MLD587
handbook, halfpage
500
Cd
400
MLD588
(fF)
rD
(Ω)
300
1
200
100
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
f = 1 MHz; T
j
= 25
°C.
20
f = 100 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
s
2
0
MLD589
(1)
(2)
21
(
dB
)
handbook, halfpage
s
2
0
MLD590
21
(
dB
)
−0.2
(3)
−10
(4)
−0.4
−20
−0.6
−30
−0.8
0
1
2
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
f (GHz)
3
−40
0
1
2
f (GHz)
3
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
Diode inserted in series with a 50
Ω
stripline circuit
and biased via the analyzer Tee network.
T
amb
= 25
°C.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Fig.4
Insertion loss (|s
21
|
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (|s
21
|
2
) of the diode as a function
of frequency; typical values.
2001 Apr 17
4
Philips Semiconductors
Product specification
Silicon PIN diode
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BAP1321-04
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2001 Apr 17
5
京公网安备 11010802033920号
EEWORLD
