K4J55323QF-GC20 datasheet, PDF

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K4J55323QF-GC20: Description256Mbit GDDR3 SDRAM; Categorystorage storage; File Size1MB，49 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4J55323QF-GC20 Overview

256Mbit GDDR3 SDRAM

K4J55323QF-GC20 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	FBGA, BGA144,12X12,32
Reach Compliance Code	unknow
Maximum access time	0.35 ns
Maximum clock frequency (fCLK)	500 MHz
I/O type	COMMON
interleaved burst length	4
JESD-30 code	S-PBGA-B144
JESD-609 code	e0
memory density	268435456 bi
Memory IC Type	DDR DRAM
memory width	32
Number of terminals	144
word count	8388608 words
character code	8000000
Maximum operating temperature	85 °C
Minimum operating temperature
organize	8MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA144,12X12,32
Package shape	SQUARE
Package form	GRID ARRAY, FINE PITCH
power supply	2 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	4
Maximum standby current	0.13 A
Maximum slew rate	0.95 mA
Nominal supply voltage (Vsup)	2 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Base Number Matches	1

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K4J55323QF-GC

256M GDDR3 SDRAM

256Mbit GDDR3 SDRAM

Revision 1.8

April 2005

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

Samsung Electronics reserves the right to change products or specification without notice.

- 1 -

Rev 1.8 (Apr. 2005)

K4J55323QF-GC20 Related Products

	K4J55323QF-GC20	K4J55323QF-GC	K4J55323QF-GC14	K4J55323QF-GC15	K4J55323QF-GC16
Description	256Mbit GDDR3 SDRAM	256Mbit GDDR3 SDRAM	256Mbit GDDR3 SDRAM	256Mbit GDDR3 SDRAM	256Mbit GDDR3 SDRAM
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible
package instruction	FBGA, BGA144,12X12,32	-	FBGA, BGA144,12X12,32	FBGA, BGA144,12X12,32	FBGA, BGA144,12X12,32
Reach Compliance Code	unknow	-	unknow	unknow	unknow
Maximum access time	0.35 ns	-	0.26 ns	0.26 ns	0.29 ns
Maximum clock frequency (fCLK)	500 MHz	-	700 MHz	667 MHz	600 MHz
I/O type	COMMON	-	COMMON	COMMON	COMMON
interleaved burst length	4	-	4	4	4
JESD-30 code	S-PBGA-B144	-	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144
JESD-609 code	e0	-	e0	-	e0
memory density	268435456 bi	-	268435456 bi	268435456 bi	268435456 bi
Memory IC Type	DDR DRAM	-	DDR DRAM	DDR DRAM	DDR DRAM
memory width	32	-	32	32	32
Number of terminals	144	-	144	144	144
word count	8388608 words	-	8388608 words	8388608 words	8388608 words
character code	8000000	-	8000000	8000000	8000000
Maximum operating temperature	85 °C	-	85 °C	85 °C	85 °C
organize	8MX32	-	8MX32	8MX32	8MX32
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	-	FBGA	FBGA	FBGA
Encapsulate equivalent code	BGA144,12X12,32	-	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32
Package shape	SQUARE	-	SQUARE	SQUARE	SQUARE
Package form	GRID ARRAY, FINE PITCH	-	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
power supply	2 V	-	2 V	2 V	2 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	-	4096	4096	4096
Continuous burst length	4	-	4	4	4
Maximum standby current	0.13 A	-	0.14 A	0.14 A	0.135 A
Maximum slew rate	0.95 mA	-	1.06 mA	1.055 mA	0.97 mA
Nominal supply voltage (Vsup)	2 V	-	2 V	2 V	2 V
surface mount	YES	-	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS
Temperature level	OTHER	-	OTHER	OTHER	OTHER
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	BALL	-	BALL	BALL	BALL
Terminal pitch	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM
Base Number Matches	1	-	1	1	1

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