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SBR580

Description
5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220
Categorysemiconductor    Discrete semiconductor   
File Size291KB,2 Pages
ManufacturerDAESAN
Websitehttp://www.diodelink.com
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SBR580 Overview

5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220

SBR520 THRU SBR5100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed:
250℃/10 seconds, 0.25" (6.35mm) from case
CURRENT 5.0Amperes
VOLTAGE 20 to 100 Volts
ITO-220A
10 0.5
3.2
6.4 0.1
4.5 0.2
2.7
2.7 0.2
3.7 0.2
Mechanical Data
· Case : JEDEC ITO-220A molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 grams
PIN 1
+
5.08
0.7 0.2
13Min
1.3 0.2
15 0.3
0.5
2.4
PIN 1
CASE
PIN 2
CasePositive
+
CASE
PIN 2
+
Case Negative
Suffix"R"
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see Fig. 1)
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 5.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=125
V
RRM
V
RMS
V
DC
I(
AV
)
I
FRM
I
FSM
SBR
520
20
SBR
530
30
SBR
540
40
SBR
560
60
SBR
580
80
SBR
590
90
SBR
5100
100
Units
Volts
Volts
Volts
Amps
Amps
Amps
14
20
21
30
28
40
42
60
5.0
10.0
100.0
56
80
63
90
70
100
V
F
I
R
JC
T
J
T
STG
0.55
0.70
1.0
0.85
Volts
mA
℃/W
15
5.0
-65 to +125
-65 to +150
50
-65 to +150
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case

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SBR580 SBR520 SBR540 SBR530 SBR560 SBR590 SBR5100
Description 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 30 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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