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8N80

Description
Drain Current –ID= 8A@ TC=25C
File Size147KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

8N80 Overview

Drain Current –ID= 8A@ TC=25C

INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
8N80
·FEATURES
·Drain
Current –I
D
= 8A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
=800V(Min)
·Static
Drain-Source On-Resistance
: R
DS(on)
= 1.55Ω(Max)
·Avalanche
Energy Specified
·Fast
Switching
·Simple
Drive Requirements
·DESCRITION
·Designed
for high efficiency switch mode power supply.
·ABSOLUTE
MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
I
DM
P
D
T
j
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Drain Current-Single Plused
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
800
±30
8
32
178
150
-55~150
UNIT
V
V
A
A
W
isc website:www.iscsemi.cn
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