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SB310G

Description
3 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size51KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

SB310G Overview

3 A, SILICON, BRIDGE RECTIFIER DIODE

SB310G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current60 A
Number of components4
Maximum operating temperature125 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
Base Number Matches1
SB305G
THRU
SB3100G
Single Phase 3.0 AMPS. Glass Passivated Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
3.0 Amperes
Features
a
a
a
a
a
a
a
UL Recognized File # E-96005
Glass passivated junction
Surge overload rating 60 amperes peak
Low forward voltage drop
High temperature soldering guaranteed:
250°C / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs. ( 2.3 Kg ) tension
Small size, simple installation
Leads solderable per MIL-STD-202,
Method 208
SB-3
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SB
SB
SB
SB
Type Number
305G
310G
320G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
A
= 50°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.5A
Maximum DC Reverse Current @ T
A
=25°C
at Rated DC Blocking Voltage @ T
A
=125°C
Operating Temperature Range T
J
Storage Temperature Range T
STG
340G
SB
360G
SB
380G
SB
3100G
Units
V
V
V
A
A
V
uA
uA
°C
°C
50
35
50
100
70
100
200
140
200
400
280
400
3.0
60
1.0
600
420
600
800
560
800
1000
700
1000
10
500
-55 to +150
-55 to +150
- 490 -

SB310G Related Products

SB310G SB380G SB360G SB340G SB320G SB3100G SB305G
Description 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V
Humidity sensitivity level 1 1 1 1 1 1 1
Maximum non-repetitive peak forward current 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Maximum repetitive peak reverse voltage 100 V 800 V 600 V 400 V 200 V 1000 V 50 V
surface mount NO NO NO NO NO NO NO
Maker - - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor
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