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SB07-03C

Description
0.7 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size50KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SB07-03C Overview

0.7 A, 30 V, SILICON, SIGNAL DIODE

SB07-03C Parametric

Parameter NameAttribute value
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current5 A
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current0.7 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.01 µs
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
Ordering number :EN2997A
SB07-03C
Shottky Barrier Diode
30V, 700mA Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1148A
[SB07-03C]
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recorvery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
1:Anode
2:No Contact
3:Cathode
SANYO:CP
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
Conditions
Ratings
30
35
700
5
–55 to +125
–55 to +125
Unit
V
V
mA
A
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recorvery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rthj-a(1)
Rthj-a(2)
Mounted on Cu-foild area of
glass epoxy board
16mm
2
×0.2mm
on
IR=300µA
IF=700mA
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
420
330
25
10
Conditions
Ratings
min
30
0.55
80
typ
max
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
· Marking:J
trr Test Circuit
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/D288TA, TS No.2997-1/2

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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