NJ6N80 POWER MOSFET
6.0A 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ6N80 is a N-channel mode power MOSFET using
advanced technology to provide customers with planar stripe and
DMOS technology. This technology specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and commutation
mode.
1
TO-220
FEATURES
* V
DS
=
800V
* I
D
=
6.0A
*
RDS(on) = 2.0
ohm
@VGS = 10 V
*
Improved dv/dt capability
*Fast
switching
*
100% avalanche tested
1
TO-220F
SYMBOL
ORDERING INFORMATION
Ordering Number
NJ6N80-LI
NJ6N80-BL
NJ6N80F-LI
Package
TO-220
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Note:
Pin Assignment: G: Gate
D: Drain
S: Source
NJ6N80 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
800
V
Gate-Source Voltage
V
GSS
±30
V
Continuous
I
D
6
A
Drain Current (Note 1)
22
A
Pulsed
I
DM
Single Pulsed (Note 2)
E
AS
680
mJ
Avalanche Energy
15.8
mJ
Repetitive (Note 1)
E
AR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
W
138
Power Dissipation
P
D
51
W
TO-220F
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 37mH, I
AS
= 6A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25°C
3. I
SD
5.5A, di/dt 200A/μs, V
DD
BV
DSS
, Starting T
J
= 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
SYMBOL
JA
JC
RATINGS
62.5
0.9
2.45
UNIT
°C/W
°C/W
°C/W
TO-220F
NJ6N80 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
800
0.97
10
100
100
-100
3.0
1.6
5.4
5.0
2.0
V
V/°C
μA
nA
nA
V
S
BV
DSS
I
D
=250μA, V
GS
=0V
BV
DSS
/ T
J
Reference to 25°C, I
D
=250μA
V
DS
=800V, V
GS
=0V
I
DSS
V
DS
=640V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
I
GSS
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=640V, I
D
=6A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=400V, I
D
=6A, R
G
=25
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=6A, V
GS
=0V
Reverse Recovery Time
t
rr
I
S
=6A, V
GS
=0V,
dI
F
/dt=100A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
1010 1310 pF
90 115 pF
8
11
pF
21
6
9
26
65
47
44
30
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
60
140
105
90
6
22
1.4
615
5.4
NJ6N80 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
V
GS
Same Type
as DUT
12V
200nF
50k
V
GS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
300nF
V
DS
Q
GS
Q
GD
Q
G
10V
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
BV
DSS
L
10V
t
P
DUT
V
DD
V
DD
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
I
D
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
NJ6N80 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Embedded System
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