PDTA123JS datasheet, PDF - EEWORLD Datasheet

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PDTA123JS: DescriptionNPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM; CategoryDiscrete semiconductor The transistor; File Size98KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PDTA123JS Overview

NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

PDTA123JS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 21
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

PDTA123J series

PNP resistor-equipped transistors;

R1 = 2.2 kΩ, R2 = 47 kΩ

Product data sheet

Supersedes data of 2003 Apr 14

2004 Aug 02

PDTA123JS Related Products

	PDTA123JS	PDTA123J	PDTA123JE	PDTA123JEF	PDTA123JK	PDTA123JU
Description	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM	PNP resistor-equipped transistor	PNP resistor-equipped transistor	PNP resistor-equipped transistor	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM	PNP resistor-equipped transistor
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to
Maker	NXP	-	NXP	NXP	NXP	-
Parts packaging code	TO-92	-	SC-75	SC-89	SOT-23	SC-70
package instruction	CYLINDRICAL, O-PBCY-T3	-	PLASTIC, SC-75, 3 PIN	PLASTIC, SC-89, 3 PIN	PLASTIC, SC-59A, 3 PIN	SMALL OUTLINE, R-PDSO-G3
Contacts	3	-	3	3	3	3
Reach Compliance Code	unknown	-	compli	unknown	unknown	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	-	-	N	N	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 21	-	BUILT-IN BIAS RESISTOR RATIO IS 21	BUILT-IN BIAS RESISTOR RATIO IS 21	BUILT-IN BIAS RESISTOR RATIO IS 21	BUILT-IN BIAS RESISTOR RATIO IS 21
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	-	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	-	100	100	100	100
JESD-30 code	O-PBCY-T3	-	R-PDSO-G3	R-PDSO-F3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	-	e3	e3	e3	e3
Number of components	1	-	1	1	1	1
Number of terminals	3	-	3	3	3	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CYLINDRICAL	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	260	NOT SPECIFIED	NOT SPECIFIED	260
Polarity/channel type	PNP	-	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.5 W	-	0.15 W	0.25 W	0.25 W	0.2 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	-	Tin (Sn)	Tin (Sn)	Matte Tin (Sn)	Tin (Sn)
Terminal form	THROUGH-HOLE	-	GULL WING	FLAT	GULL WING	GULL WING
Terminal location	BOTTOM	-	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	30	NOT SPECIFIED	NOT SPECIFIED	30
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	-	-	1	1	1

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